Fabrication of thin-film electronic devices with non-destructive wafer reuse
Thin-film electronic devices such as LED devices and field effect transistor devices are fabricated using a non-destructive epitaxial lift-off technique that allows indefinite reuse of a growth substrate. The method includes providing an epitaxial protective layer on the growth substrate and a sacrificial release layer between the protective layer and an active device layer. After the device layer is released from the growth substrate, the protective layer is selectively etched to provide a newly exposed surface suitable for epitaxial growth of another device layer. The entire thickness of the growth substrate is preserved, enabling continued reuse. Inorganic thin-film device layers can be transferred to a flexible secondary substrate, enabling formation of curved inorganic optoelectronic devices.
- Research Organization:
- Univ. of Michigan, Ann Arbor, MI (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- SC0001013
- Assignee:
- The Regents of the University of Michigan (Ann Arbor, MI)
- Patent Number(s):
- 10,535,685
- Application Number:
- 15/101,287
- OSTI ID:
- 1632442
- Country of Publication:
- United States
- Language:
- English
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