Methods for fabricating thin film III-V compound solar cell

Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

Methods for fabricating thin film III-V compound solar cell

Patent · Tue Aug 09 04:00:00 EDT 2011

OSTI ID:1176431

Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

Research Organization:: MicroLink Devices, Inc., Niles, IL (United States)

Sponsoring Organization:: USDOE

Assignee:: MicroLink Devices, Inc. (Niles, IL)

Patent Number(s):: 7,994,419

Application Number:: 12/167,583

OSTI ID:: 1176431

Country of Publication:: United States

Language:: English

References (9)

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High rate epitaxial lift-off of InGaP films from GaAs substrates Schermer, J. J.; Bauhuis, G. J.; Mulder, P. Applied Physics Letters, Vol. 76, Issue 15 https://doi.org/10.1063/1.126276	journal	April 2000
Future technology pathways of terrestrial III–V multijunction solar cells for concentrator photovoltaic systems Law, Daniel C.; King, R. R.; Yoon, H. Solar Energy Materials and Solar Cells, Vol. 94, Issue 8, p. 1314-1318 https://doi.org/10.1016/j.solmat.2008.07.014	journal	August 2010
Direct-bonded GaAs∕InGaAs tandem solar cell Tanabe, Katsuaki; Fontcuberta i. Morral, Anna; Atwater, Harry A. Applied Physics Letters, Vol. 89, Issue 10 https://doi.org/10.1063/1.2347280	journal	September 2006
High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction Geisz, J. F.; Kurtz, Sarah; Wanlass, M. W. Applied Physics Letters, Vol. 91, Issue 2, Article No. 023502 https://doi.org/10.1063/1.2753729	journal	July 2007
Paper-Thin InGaP/ GaAs Solar Cells Takamoto, Tatsuya; Kodama, Tomoya; Yamaguchi, Hiroshi 2006 IEEE 4th World Conference on Photovoltaic Energy Conference https://doi.org/10.1109/WCPEC.2006.279833	conference	May 2006
Epitaxial lift-off GaAs solar cell from a reusable GaAs substrate van Geelen, A.; Hageman, P. R.; Bauhuis, G. J. Materials Science and Engineering: B, Vol. 45, Issue 1-3, p. 162-171 https://doi.org/10.1016/S0921-5107(96)02029-6	journal	March 1997
Epitaxial Lift-Off for large area thin film III/V devices Schermer, J. J.; Mulder, P.; Bauhuis, G. J. physica status solidi (a), Vol. 202, Issue 4 https://doi.org/10.1002/pssa.200460410	journal	March 2005
InGaAs/InP double heterostructures on InP/Si templates fabricated by wafer bonding and hydrogen-induced exfoliation Fontcuberta i. Morral, A.; Zahler, J. M.; Atwater, Harry A. Applied Physics Letters, Vol. 83, Issue 26 https://doi.org/10.1063/1.1637429	journal	December 2003

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