Vortex‐Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures

Chang, Kai; Villanova, John W. D.; Ji, Jing‐Rong; Das, Souvik; Küster, Felix; Barraza‐Lopez, Salvador; Sessi, Paolo; Parkin, Stuart S. P.

doi:10.1002/adma.202102267

Vortex‐Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures

Journal Article · Sat Jul 03 00:00:00 EDT 2021 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202102267· OSTI ID:1805072

^[1]; ^[2]; Ji, Jing‐Rong ^[3]; Das, Souvik ^[3]; Küster, Felix ^[3]; ^[2]; ^[3]; ^[3]

Max Planck Institute of Microstructure Physics Weinberg 2 06120 Halle Germany, Beijing Academy of Quantum Information Sciences Beijing 100193 China
Department of Physics University of Arkansas Fayetteville AR 72701 USA
Max Planck Institute of Microstructure Physics Weinberg 2 06120 Halle Germany

Abstract

Heterostructures formed from interfaces between materials with complementary properties often display unconventional physics. Of especial interest are heterostructures formed with ferroelectric materials. These are mostly formed by combining thin layers in vertical stacks. Here the first in situ molecular beam epitaxial growth and scanning tunneling microscopy characterization of atomically sharp lateral heterostructures between a ferroelectric SnTe monolayer and a paraelectric PbTe monolayer are reported. The bias voltage dependence of the apparent heights of SnTe and PbTe monolayers, which are closely related to the type‐II band alignment of the heterostructure, is investigated. Remarkably, it is discovered that the ferroelectric domains in the SnTe surrounding a PbTe core form either clockwise or counterclockwise vortex‐oriented quadrant configurations. In addition, when there is a finite angle between the polarization and the interface, the perpendicular component of the polarization always points from SnTe to PbTe. Supported by first‐principles calculation, the mechanism of vortex formation and preferred polarization direction is identified in the interaction between the polarization, the space charge, and the strain effect at the horizontal heterointerface. The studies bring the application of 2D group‐IV monochalcogenides on in‐plane ferroelectric heterostructures a step closer.

View Journal Article

Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0016139

OSTI ID:: 1805072

Alternate ID(s):: OSTI ID: 1805074
OSTI ID: 1852101

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 32 Vol. 33; ISSN 0935-9648

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

References (70)

Lateral Built-In Potential of Monolayer MoS ₂ -WS ₂ In-Plane Heterostructures by a Shortcut Growth Strategy Chen, Kun; Wan, Xi; Xie, Weiguang Advanced Materials, Vol. 27, Issue 41 https://doi.org/10.1002/adma.201502375	journal	September 2015
Parallel Stitching of 2D Materials Ling, Xi; Lin, Yuxuan; Ma, Qiong Advanced Materials, Vol. 28, Issue 12 https://doi.org/10.1002/adma.201505070	journal	January 2016
Layer Engineering of 2D Semiconductor Junctions He, Yongmin; Sobhani, Ali; Lei, Sidong Advanced Materials, Vol. 28, Issue 25 https://doi.org/10.1002/adma.201600278	journal	May 2016
Edge-Epitaxial Growth of 2D NbS ₂ -WS ₂ Lateral Metal-Semiconductor Heterostructures Zhang, Yu; Yin, Lei; Chu, Junwei Advanced Materials, Vol. 30, Issue 40 https://doi.org/10.1002/adma.201803665	journal	August 2018
Enhanced Spontaneous Polarization in Ultrathin SnTe Films with Layered Antipolar Structure Chang, Kai; Kaloni, Thaneshwor P.; Lin, Haicheng Advanced Materials, Vol. 31, Issue 3 https://doi.org/10.1002/adma.201804428	journal	September 2018
Recent Progress in Two‐Dimensional Ferroelectric Materials Guan, Zhao; Hu, He; Shen, Xinwei Advanced Electronic Materials, Vol. 6, Issue 1 https://doi.org/10.1002/aelm.201900818	journal	November 2019
Direct Growth of High Mobility and Low-Noise Lateral MoS ₂ -Graphene Heterostructure Electronics Behranginia, Amirhossein; Yasaei, Poya; Majee, Arnab K. Small, Vol. 13, Issue 30 https://doi.org/10.1002/smll.201604301	journal	June 2017
Recent Advances in 2D Lateral Heterostructures Wang, Jianwei; Li, Zhiqiang; Chen, Haiyuan Nano-Micro Letters, Vol. 11, Issue 1 https://doi.org/10.1007/s40820-019-0276-y	journal	June 2019
Zur berechnung des tunnelstroms durch eine trapezförmige potentialstufe Gundlach, K. H. Solid-State Electronics, Vol. 9, Issue 10 https://doi.org/10.1016/0038-1101(66)90071-2	journal	October 1966
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set Kresse, G.; Furthmüller, J. Computational Materials Science, Vol. 6, Issue 1, p. 15-50 https://doi.org/10.1016/0927-0256(96)00008-0	journal	July 1996
Theoretical design of SnTe/GeS lateral heterostructures: A first-principles study Guo, Hao; Jiang, Wentao; Fan, Haidong Physica B: Condensed Matter, Vol. 583 https://doi.org/10.1016/j.physb.2020.412047	journal	April 2020
Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature Chang, Kai; Küster, Felix; Miller, Brandon J. Nano Letters, Vol. 20, Issue 9 https://doi.org/10.1021/acs.nanolett.0c02357	journal	August 2020
Two-Step Growth of Two-Dimensional WSe ₂ /MoSe ₂ Heterostructures Gong, Yongji; Lei, Sidong; Ye, Gonglan Nano Letters, Vol. 15, Issue 9 https://doi.org/10.1021/acs.nanolett.5b02423	journal	August 2015
Intrinsic Ferroelasticity and/or Multiferroicity in Two-Dimensional Phosphorene and Phosphorene Analogues Wu, Menghao; Zeng, Xiao Cheng Nano Letters, Vol. 16, Issue 5 https://doi.org/10.1021/acs.nanolett.6b00726	journal	April 2016
Gate-Tunable In-Plane Ferroelectricity in Few-Layer SnS Bao, Yang; Song, Peng; Liu, Yanpeng Nano Letters, Vol. 19, Issue 8 https://doi.org/10.1021/acs.nanolett.9b01419	journal	June 2019
Two-Dimensional Ferroelectric Tunnel Junction: The Case of Monolayer In:SnSe/SnSe/Sb:SnSe Homostructure Shen, Xin-Wei; Fang, Yue-Wen; Tian, Bo-Bo ACS Applied Electronic Materials, Vol. 1, Issue 7 https://doi.org/10.1021/acsaelm.9b00146	journal	June 2019
Complete Separation of Carriers in the GeS/SnS Lateral Heterostructure by Uniaxial Tensile Strain Peng, Lei; Wang, Chan; Qian, Qi ACS Applied Materials & Interfaces, Vol. 9, Issue 46 https://doi.org/10.1021/acsami.7b11613	journal	November 2017
Lateral Heterostructures Formed by Thermally Converting n-Type SnSe ₂ to p-Type SnSe Tian, Zhen; Zhao, Mingxing; Xue, Xiongxiong ACS Applied Materials & Interfaces, Vol. 10, Issue 15 https://doi.org/10.1021/acsami.8b01235	journal	December 2017
In-Plane Ferroelectric Tin Monosulfide and Its Application in a Ferroelectric Analog Synaptic Device Kwon, Ki Chang; Zhang, Yishu; Wang, Lin ACS Nano, Vol. 14, Issue 6 https://doi.org/10.1021/acsnano.0c03869	journal	June 2020
Electronic Properties of MoS ₂ –WS ₂ Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy Chen, Kun; Wan, Xi; Wen, Jinxiu ACS Nano, Vol. 9, Issue 10 https://doi.org/10.1021/acsnano.5b03188	journal	September 2015
Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS ₂ Heterostructures Zheng, Changxi; Zhang, Qianhui; Weber, Bent ACS Nano, Vol. 11, Issue 3 https://doi.org/10.1021/acsnano.6b07832	journal	February 2017
Spontaneous Vortex Nanodomain Arrays at Ferroelectric Heterointerfaces Nelson, Christopher T.; Winchester, Benjamin; Zhang, Yi Nano Letters, Vol. 11, Issue 2 https://doi.org/10.1021/nl1041808	journal	February 2011
Continuous Growth of Hexagonal Graphene and Boron Nitride In-Plane Heterostructures by Atmospheric Pressure Chemical Vapor Deposition Han, Gang Hee; Rodríguez-Manzo, Julio A.; Lee, Chan-Woo ACS Nano, Vol. 7, Issue 11 https://doi.org/10.1021/nn404331f	journal	October 2013
Graphene and boron nitride lateral heterostructures for atomically thin circuitry Levendorf, Mark P.; Kim, Cheol-Joo; Brown, Lola Nature, Vol. 488, Issue 7413, p. 627-632 https://doi.org/10.1038/nature11408	journal	August 2012
Observation of polar vortices in oxide superlattices Yadav, A. K.; Nelson, C. T.; Hsu, S. L. Nature, Vol. 530, Issue 7589 https://doi.org/10.1038/nature16463	journal	January 2016
One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy Sahoo, Prasana K.; Memaran, Shahriar; Xin, Yan Nature, Vol. 553, Issue 7686 https://doi.org/10.1038/nature25155	journal	January 2018
Visualizing band offsets and edge states in bilayer–monolayer transition metal dichalcogenides lateral heterojunction Zhang, Chendong; Chen, Yuxuan; Huang, Jing-Kai Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms10349	journal	January 2016
Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors Mahjouri-Samani, Masoud; Lin, Ming-Wei; Wang, Kai Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms8749	journal	July 2015
Atomic layers of hybridized boron nitride and graphene domains Ci, Lijie; Song, Li; Jin, Chuanhong Nature Materials, Vol. 9, Issue 5, p. 430-435 https://doi.org/10.1038/nmat2711	journal	February 2010
Vertical and in-plane heterostructures from WS₂/MoS₂ monolayers Gong, Yongji; Lin, Junhao; Wang, Xingli Nature Materials, Vol. 13, Issue 12, p. 1135-1142 https://doi.org/10.1038/nmat4091	journal	September 2014
In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes Liu, Zheng; Ma, Lulu; Shi, Gang Nature Nanotechnology, Vol. 8, Issue 2 https://doi.org/10.1038/nnano.2012.256	journal	January 2013
Graphene nanoribbon heterojunctions Cai, Jinming; Pignedoli, Carlo A.; Talirz, Leopold Nature Nanotechnology, Vol. 9, Issue 11 https://doi.org/10.1038/nnano.2014.184	journal	September 2014
Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions Duan, Xidong; Wang, Chen; Shaw, Jonathan C. Nature Nanotechnology, Vol. 9, Issue 12, p. 1024-1030 https://doi.org/10.1038/nnano.2014.222	journal	September 2014
Molecular bandgap engineering of bottom-up synthesized graphene nanoribbon heterojunctions Chen, Yen-Chia; Cao, Ting; Chen, Chen Nature Nanotechnology, Vol. 10, Issue 2 https://doi.org/10.1038/nnano.2014.307	journal	January 2015
Large-scale chemical assembly of atomically thin transistors and circuits Zhao, Mervin; Ye, Yu; Han, Yimo Nature Nanotechnology, Vol. 11, Issue 11 https://doi.org/10.1038/nnano.2016.115	journal	July 2016
Enhanced electric conductivity at ferroelectric vortex cores in BiFeO3 Balke, Nina; Winchester, Benjamin; Ren, Wei Nature Physics, Vol. 8, Issue 1 https://doi.org/10.1038/nphys2132	journal	November 2011
Purely in-plane ferroelectricity in monolayer SnS at room temperature Higashitarumizu, Naoki; Kawamoto, Hayami; Lee, Chien-Ju Nature Communications, Vol. 11, Issue 1 https://doi.org/10.1038/s41467-020-16291-9	journal	May 2020
Scalability assessment of Group-IV mono-chalcogenide based tunnel FET Brahma, Madhuchhanda; Kabiraj, Arnab; Saha, Dipankar Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-24209-1	journal	April 2018
A dielectric-defined lateral heterojunction in a monolayer semiconductor Utama, M. Iqbal Bakti; Kleemann, Hans; Zhao, Wenyu Nature Electronics, Vol. 2, Issue 2 https://doi.org/10.1038/s41928-019-0207-4	journal	February 2019
Lateral heterostructures of monolayer group-IV monochalcogenides: band alignment and electronic properties Cheng, Kai; Guo, Yu; Han, Nannan Journal of Materials Chemistry C, Vol. 5, Issue 15 https://doi.org/10.1039/C7TC00595D	journal	January 2017
Electronic structures and transport properties of SnS–SnSe nanoribbon lateral heterostructures Yang, Yang; Zhou, Yuhao; Luo, Zhuang Physical Chemistry Chemical Physics, Vol. 21, Issue 18 https://doi.org/10.1039/C9CP00427K	journal	January 2019
Sub-10 nm tunneling field-effect transistors based on monolayer group IV mono-chalcogenides Li, Hong; Xu, Peipei; Lu, Jing Nanoscale, Vol. 11, Issue 48 https://doi.org/10.1039/C9NR07590A	journal	January 2019
Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors Xu, Peipei; Liang, Jiakun; Li, Hong RSC Advances, Vol. 10, Issue 27 https://doi.org/10.1039/D0RA02265A	journal	January 2020
Influence of the exchange screening parameter on the performance of screened hybrid functionals Krukau, Aliaksandr V.; Vydrov, Oleg A.; Izmaylov, Artur F. The Journal of Chemical Physics, Vol. 125, Issue 22 https://doi.org/10.1063/1.2404663	journal	December 2006
The growth and phase distribution of ultrathin SnTe on graphene Chang, Kai; Parkin, Stuart S. P. APL Materials, Vol. 7, Issue 4 https://doi.org/10.1063/1.5091546	journal	April 2019
Tunneling through a controllable vacuum gap Binnig, G.; Rohrer, H.; Gerber, Ch. Applied Physics Letters, Vol. 40, Issue 2 https://doi.org/10.1063/1.92999	journal	January 1982
Experimental formation of monolayer group-IV monochalcogenides Chang, Kai; Parkin, Stuart S. P. Journal of Applied Physics, Vol. 127, Issue 22 https://doi.org/10.1063/5.0012300	journal	June 2020
The SIESTA method for ab initio order- N materials simulation Soler, José M.; Artacho, Emilio; Gale, Julian D. Journal of Physics: Condensed Matter, Vol. 14, Issue 11 https://doi.org/10.1088/0953-8984/14/11/302	journal	March 2002
Two-dimensional multiferroics in monolayer group IV monochalcogenides Wang, Hua; Qian, Xiaofeng 2D Materials, Vol. 4, Issue 1 https://doi.org/10.1088/2053-1583/4/1/015042	journal	January 2017
In-Plane Ferroelectric Tunnel Junction Shen, Huitao; Liu, Junwei; Chang, Kai Physical Review Applied, Vol. 11, Issue 2 https://doi.org/10.1103/PhysRevApplied.11.024048	journal	February 2019
Theory of finite-temperature two-dimensional structural transformations in group-IV monochalcogenide monolayers Villanova, John W.; Kumar, Pradeep; Barraza-Lopez, Salvador Physical Review B, Vol. 101, Issue 18 https://doi.org/10.1103/PhysRevB.101.184101	journal	May 2020
Berezinskii-Kosterlitz-Thouless phase in two-dimensional ferroelectrics Xu, Changsong; Nahas, Yousra; Prokhorenko, Sergei Physical Review B, Vol. 101, Issue 24 https://doi.org/10.1103/PhysRevB.101.241402	journal	June 2020
Projector augmented-wave method Blöchl, P. E. Physical Review B, Vol. 50, Issue 24, p. 17953-17979 https://doi.org/10.1103/PhysRevB.50.17953	journal	December 1994
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
Gundlach oscillations and Coulomb blockade of Co nanoislands on MgO/Mo(100) investigated by scanning tunneling spectroscopy at 300 K Pauly, C.; Grob, M.; Pezzotta, M. Physical Review B, Vol. 81, Issue 12 https://doi.org/10.1103/PhysRevB.81.125446	journal	March 2010
Polarization and valley switching in monolayer group-IV monochalcogenides Hanakata, Paul Z.; Carvalho, Alexandra; Campbell, David K. Physical Review B, Vol. 94, Issue 3 https://doi.org/10.1103/PhysRevB.94.035304	journal	July 2016
Duality of Topological Defects in Hexagonal Manganites Huang, Fei-Ting; Wang, Xueyun; Griffin, Sinead M. Physical Review Letters, Vol. 113, Issue 26 https://doi.org/10.1103/PhysRevLett.113.267602	journal	December 2014
Ferroelectricity and Phase Transitions in Monolayer Group-IV Monochalcogenides Fei, Ruixiang; Kang, Wei; Yang, Li Physical Review Letters, Vol. 117, Issue 9 https://doi.org/10.1103/PhysRevLett.117.097601	journal	August 2016
Structural Phase Transition and Material Properties of Few-Layer Monochalcogenides Mehboudi, Mehrshad; Fregoso, Benjamin M.; Yang, Yurong Physical Review Letters, Vol. 117, Issue 24 https://doi.org/10.1103/PhysRevLett.117.246802	journal	December 2016
Standing Waves Induced by Valley-Mismatched Domains in Ferroelectric SnTe Monolayers Chang, Kai; Miller, Brandon J.; Yang, Hao Physical Review Letters, Vol. 122, Issue 20 https://doi.org/10.1103/PhysRevLett.122.206402	journal	May 2019
Generalized Gradient Approximation Made Simple Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868 https://doi.org/10.1103/PhysRevLett.77.3865	journal	October 1996
Manifestation of Work Function Difference in High Order Gundlach Oscillation Lin, C. L.; Lu, S. M.; Su, W. B. Physical Review Letters, Vol. 99, Issue 21 https://doi.org/10.1103/PhysRevLett.99.216103	journal	November 2007
Colloquium : Physical properties of group-IV monochalcogenide monolayers Barraza-Lopez, Salvador; Fregoso, Benjamin M.; Villanova, John W. Reviews of Modern Physics, Vol. 93, Issue 1 https://doi.org/10.1103/RevModPhys.93.011001	journal	March 2021
High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states Li, Zhongwen; Wang, Yujia; Tian, Guo Science Advances, Vol. 3, Issue 8 https://doi.org/10.1126/sciadv.1700919	journal	August 2017
Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges Liu, L.; Park, J.; Siegel, D. A. Science, Vol. 343, Issue 6167 https://doi.org/10.1126/science.1246137	journal	January 2014
Observation of a periodic array of flux-closure quadrants in strained ferroelectric PbTiO3 films Tang, Y. L.; Zhu, Y. L.; Ma, X. L. Science, Vol. 348, Issue 6234 https://doi.org/10.1126/science.1259869	journal	April 2015
Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface Li, M. -Y.; Shi, Y.; Cheng, C. -C. Science, Vol. 349, Issue 6247 https://doi.org/10.1126/science.aab4097	journal	July 2015
Discovery of robust in-plane ferroelectricity in atomic-thick SnTe Chang, Kai; Liu, Junwei; Lin, Haicheng Science, Vol. 353, Issue 6296, p. 274-278 https://doi.org/10.1126/science.aad8609	journal	July 2016
Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices Zhang, Zhengwei; Chen, Peng; Duan, Xidong Science, Vol. 357, Issue 6353 https://doi.org/10.1126/science.aan6814	journal	August 2017
Separation of enantiomers by their enantiospecific interaction with achiral magnetic substrates Banerjee-Ghosh, Koyel; Ben Dor, Oren; Tassinari, Francesco Science, Vol. 360, Issue 6395 https://doi.org/10.1126/science.aar4265	journal	May 2018

Similar Records

Vortex-Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures

Journal Article · Sat Jul 03 00:00:00 EDT 2021 · Advanced Materials · OSTI ID:1852101

Standing Waves Induced by Valley-Mismatched Domains in Ferroelectric SnTe Monolayers

Journal Article · Thu May 23 20:00:00 EDT 2019 · Physical Review Letters · OSTI ID:1612402

Vortex‐Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures

Citation Formats

References (70)

Similar Records

Related Subjects