Vortex-Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures

Chang, Kai; Villanova, John W.  D.; Ji, Jing‐Rong; Das, Souvik; Küster, Felix; Barraza‐Lopez, Salvador; Sessi, Paolo; Parkin, Stuart S.  P.

doi:10.1002/adma.202102267

Vortex-Oriented Ferroelectric Domains in SnTe/PbTe Monolayer Lateral Heterostructures

Journal Article · Sat Jul 03 04:00:00 EDT 2021 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202102267· OSTI ID:1852101

^[1]; ^[2]; Ji, Jing‐Rong ^[3]; Das, Souvik ^[3]; Küster, Felix ^[3]; ^[2]; ^[3]; ^[3]

Max Planck Institute of Microstructure Physics Weinberg 2 06120 Halle Germany; Beijing Academy of Quantum Information Sciences Beijing 100193 China; OSTI
Department of Physics University of Arkansas Fayetteville AR 72701 USA
Max Planck Institute of Microstructure Physics Weinberg 2 06120 Halle Germany

Not provided.

Research Organization:: Univ. of Arkansas, Fayetteville, AR (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0016139

OSTI ID:: 1852101

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 32 Vol. 33; ISSN 0935-9648

Publisher:: Wiley

Country of Publication:: United States

Language:: English

References (70)

Continuous Growth of Hexagonal Graphene and Boron Nitride In-Plane Heterostructures by Atmospheric Pressure Chemical Vapor Deposition Han, Gang Hee; Rodríguez-Manzo, Julio A.; Lee, Chan-Woo ACS Nano, Vol. 7, Issue 11 https://doi.org/10.1021/nn404331f	journal	October 2013
Intrinsic Ferroelasticity and/or Multiferroicity in Two-Dimensional Phosphorene and Phosphorene Analogues Wu, Menghao; Zeng, Xiao Cheng Nano Letters, Vol. 16, Issue 5 https://doi.org/10.1021/acs.nanolett.6b00726	journal	April 2016
Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS ₂ Heterostructures Zheng, Changxi; Zhang, Qianhui; Weber, Bent ACS Nano, Vol. 11, Issue 3 https://doi.org/10.1021/acsnano.6b07832	journal	February 2017
Spontaneous Vortex Nanodomain Arrays at Ferroelectric Heterointerfaces Nelson, Christopher T.; Winchester, Benjamin; Zhang, Yi Nano Letters, Vol. 11, Issue 2 https://doi.org/10.1021/nl1041808	journal	February 2011
Lateral Built-In Potential of Monolayer MoS ₂ -WS ₂ In-Plane Heterostructures by a Shortcut Growth Strategy Chen, Kun; Wan, Xi; Xie, Weiguang Advanced Materials, Vol. 27, Issue 41 https://doi.org/10.1002/adma.201502375	journal	September 2015
Electronic Properties of MoS ₂ –WS ₂ Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy Chen, Kun; Wan, Xi; Wen, Jinxiu ACS Nano, Vol. 9, Issue 10 https://doi.org/10.1021/acsnano.5b03188	journal	September 2015
Scalability assessment of Group-IV mono-chalcogenide based tunnel FET Brahma, Madhuchhanda; Kabiraj, Arnab; Saha, Dipankar Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-24209-1	journal	April 2018
Parallel Stitching of 2D Materials Ling, Xi; Lin, Yuxuan; Ma, Qiong Advanced Materials, Vol. 28, Issue 12 https://doi.org/10.1002/adma.201505070	journal	January 2016
Experimental formation of monolayer group-IV monochalcogenides Chang, Kai; Parkin, Stuart S. P. Journal of Applied Physics, Vol. 127, Issue 22 https://doi.org/10.1063/5.0012300	journal	June 2020
In-Plane Ferroelectric Tunnel Junction Shen, Huitao; Liu, Junwei; Chang, Kai Physical Review Applied, Vol. 11, Issue 2 https://doi.org/10.1103/PhysRevApplied.11.024048	journal	February 2019
In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes Liu, Zheng; Ma, Lulu; Shi, Gang Nature Nanotechnology, Vol. 8, Issue 2 https://doi.org/10.1038/nnano.2012.256	journal	January 2013
Enhanced Spontaneous Polarization in Ultrathin SnTe Films with Layered Antipolar Structure Chang, Kai; Kaloni, Thaneshwor P.; Lin, Haicheng Advanced Materials, Vol. 31, Issue 3 https://doi.org/10.1002/adma.201804428	journal	September 2018
Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions Duan, Xidong; Wang, Chen; Shaw, Jonathan C. Nature Nanotechnology, Vol. 9, Issue 12, p. 1024-1030 https://doi.org/10.1038/nnano.2014.222	journal	September 2014
Gate-Tunable In-Plane Ferroelectricity in Few-Layer SnS Bao, Yang; Song, Peng; Liu, Yanpeng Nano Letters, Vol. 19, Issue 8 https://doi.org/10.1021/acs.nanolett.9b01419	journal	June 2019
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set Kresse, G.; Furthmüller, J. Computational Materials Science, Vol. 6, Issue 1, p. 15-50 https://doi.org/10.1016/0927-0256(96)00008-0	journal	July 1996
The SIESTA method for ab initio order- N materials simulation Soler, José M.; Artacho, Emilio; Gale, Julian D. Journal of Physics: Condensed Matter, Vol. 14, Issue 11 https://doi.org/10.1088/0953-8984/14/11/302	journal	March 2002
Discovery of robust in-plane ferroelectricity in atomic-thick SnTe Chang, Kai; Liu, Junwei; Lin, Haicheng Science, Vol. 353, Issue 6296, p. 274-278 https://doi.org/10.1126/science.aad8609	journal	July 2016
Projector augmented-wave method Blöchl, P. E. Physical Review B, Vol. 50, Issue 24, p. 17953-17979 https://doi.org/10.1103/PhysRevB.50.17953	journal	December 1994
Direct Growth of High Mobility and Low-Noise Lateral MoS ₂ -Graphene Heterostructure Electronics Behranginia, Amirhossein; Yasaei, Poya; Majee, Arnab K. Small, Vol. 13, Issue 30 https://doi.org/10.1002/smll.201604301	journal	June 2017
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
Manifestation of Work Function Difference in High Order Gundlach Oscillation Lin, C. L.; Lu, S. M.; Su, W. B. Physical Review Letters, Vol. 99, Issue 21 https://doi.org/10.1103/PhysRevLett.99.216103	journal	November 2007
Graphene nanoribbon heterojunctions Cai, Jinming; Pignedoli, Carlo A.; Talirz, Leopold Nature Nanotechnology, Vol. 9, Issue 11 https://doi.org/10.1038/nnano.2014.184	journal	September 2014
A dielectric-defined lateral heterojunction in a monolayer semiconductor Utama, M. Iqbal Bakti; Kleemann, Hans; Zhao, Wenyu Nature Electronics, Vol. 2, Issue 2 https://doi.org/10.1038/s41928-019-0207-4	journal	February 2019
Theoretical design of SnTe/GeS lateral heterostructures: A first-principles study Guo, Hao; Jiang, Wentao; Fan, Haidong Physica B: Condensed Matter, Vol. 583 https://doi.org/10.1016/j.physb.2020.412047	journal	April 2020
Colloquium : Physical properties of group-IV monochalcogenide monolayers Barraza-Lopez, Salvador; Fregoso, Benjamin M.; Villanova, John W. Reviews of Modern Physics, Vol. 93, Issue 1 https://doi.org/10.1103/RevModPhys.93.011001	journal	March 2021
Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges Liu, L.; Park, J.; Siegel, D. A. Science, Vol. 343, Issue 6167 https://doi.org/10.1126/science.1246137	journal	January 2014
Theory of finite-temperature two-dimensional structural transformations in group-IV monochalcogenide monolayers Villanova, John W.; Kumar, Pradeep; Barraza-Lopez, Salvador Physical Review B, Vol. 101, Issue 18 https://doi.org/10.1103/PhysRevB.101.184101	journal	May 2020
Ferroelectricity and Phase Transitions in Monolayer Group-IV Monochalcogenides Fei, Ruixiang; Kang, Wei; Yang, Li Physical Review Letters, Vol. 117, Issue 9 https://doi.org/10.1103/PhysRevLett.117.097601	journal	August 2016
Large-scale chemical assembly of atomically thin transistors and circuits Zhao, Mervin; Ye, Yu; Han, Yimo Nature Nanotechnology, Vol. 11, Issue 11 https://doi.org/10.1038/nnano.2016.115	journal	July 2016
In-Plane Ferroelectric Tin Monosulfide and Its Application in a Ferroelectric Analog Synaptic Device Kwon, Ki Chang; Zhang, Yishu; Wang, Lin ACS Nano, Vol. 14, Issue 6 https://doi.org/10.1021/acsnano.0c03869	journal	June 2020
Berezinskii-Kosterlitz-Thouless phase in two-dimensional ferroelectrics Xu, Changsong; Nahas, Yousra; Prokhorenko, Sergei Physical Review B, Vol. 101, Issue 24 https://doi.org/10.1103/PhysRevB.101.241402	journal	June 2020
Observation of polar vortices in oxide superlattices Yadav, A. K.; Nelson, C. T.; Hsu, S. L. Nature, Vol. 530, Issue 7589 https://doi.org/10.1038/nature16463	journal	January 2016
Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices Zhang, Zhengwei; Chen, Peng; Duan, Xidong Science, Vol. 357, Issue 6353 https://doi.org/10.1126/science.aan6814	journal	August 2017
Zur berechnung des tunnelstroms durch eine trapezförmige potentialstufe Gundlach, K. H. Solid-State Electronics, Vol. 9, Issue 10 https://doi.org/10.1016/0038-1101(66)90071-2	journal	October 1966
Duality of Topological Defects in Hexagonal Manganites Huang, Fei-Ting; Wang, Xueyun; Griffin, Sinead M. Physical Review Letters, Vol. 113, Issue 26 https://doi.org/10.1103/PhysRevLett.113.267602	journal	December 2014
Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature Chang, Kai; Küster, Felix; Miller, Brandon J. Nano Letters, Vol. 20, Issue 9 https://doi.org/10.1021/acs.nanolett.0c02357	journal	August 2020
Electronic structures and transport properties of SnS–SnSe nanoribbon lateral heterostructures Yang, Yang; Zhou, Yuhao; Luo, Zhuang Physical Chemistry Chemical Physics, Vol. 21, Issue 18 https://doi.org/10.1039/C9CP00427K	journal	January 2019
Influence of the exchange screening parameter on the performance of screened hybrid functionals Krukau, Aliaksandr V.; Vydrov, Oleg A.; Izmaylov, Artur F. The Journal of Chemical Physics, Vol. 125, Issue 22 https://doi.org/10.1063/1.2404663	journal	December 2006
Edge-Epitaxial Growth of 2D NbS ₂ -WS ₂ Lateral Metal-Semiconductor Heterostructures Zhang, Yu; Yin, Lei; Chu, Junwei Advanced Materials, Vol. 30, Issue 40 https://doi.org/10.1002/adma.201803665	journal	August 2018
Molecular bandgap engineering of bottom-up synthesized graphene nanoribbon heterojunctions Chen, Yen-Chia; Cao, Ting; Chen, Chen Nature Nanotechnology, Vol. 10, Issue 2 https://doi.org/10.1038/nnano.2014.307	journal	January 2015
Two-dimensional multiferroics in monolayer group IV monochalcogenides Wang, Hua; Qian, Xiaofeng 2D Materials, Vol. 4, Issue 1 https://doi.org/10.1088/2053-1583/4/1/015042	journal	January 2017
Graphene and boron nitride lateral heterostructures for atomically thin circuitry Levendorf, Mark P.; Kim, Cheol-Joo; Brown, Lola Nature, Vol. 488, Issue 7413, p. 627-632 https://doi.org/10.1038/nature11408	journal	August 2012
One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy Sahoo, Prasana K.; Memaran, Shahriar; Xin, Yan Nature, Vol. 553, Issue 7686 https://doi.org/10.1038/nature25155	journal	January 2018
Enhanced electric conductivity at ferroelectric vortex cores in BiFeO3 Balke, Nina; Winchester, Benjamin; Ren, Wei Nature Physics, Vol. 8, Issue 1 https://doi.org/10.1038/nphys2132	journal	November 2011
Purely in-plane ferroelectricity in monolayer SnS at room temperature Higashitarumizu, Naoki; Kawamoto, Hayami; Lee, Chien-Ju Nature Communications, Vol. 11, Issue 1 https://doi.org/10.1038/s41467-020-16291-9	journal	May 2020
High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states Li, Zhongwen; Wang, Yujia; Tian, Guo Science Advances, Vol. 3, Issue 8 https://doi.org/10.1126/sciadv.1700919	journal	August 2017
Layer Engineering of 2D Semiconductor Junctions He, Yongmin; Sobhani, Ali; Lei, Sidong Advanced Materials, Vol. 28, Issue 25 https://doi.org/10.1002/adma.201600278	journal	May 2016
Separation of enantiomers by their enantiospecific interaction with achiral magnetic substrates Banerjee-Ghosh, Koyel; Ben Dor, Oren; Tassinari, Francesco Science, Vol. 360, Issue 6395 https://doi.org/10.1126/science.aar4265	journal	May 2018
Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface Li, M. -Y.; Shi, Y.; Cheng, C. -C. Science, Vol. 349, Issue 6247 https://doi.org/10.1126/science.aab4097	journal	July 2015
Vertical and in-plane heterostructures from WS₂/MoS₂ monolayers Gong, Yongji; Lin, Junhao; Wang, Xingli Nature Materials, Vol. 13, Issue 12, p. 1135-1142 https://doi.org/10.1038/nmat4091	journal	September 2014
Generalized Gradient Approximation Made Simple Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868 https://doi.org/10.1103/PhysRevLett.77.3865	journal	October 1996
Two-Step Growth of Two-Dimensional WSe ₂ /MoSe ₂ Heterostructures Gong, Yongji; Lei, Sidong; Ye, Gonglan Nano Letters, Vol. 15, Issue 9 https://doi.org/10.1021/acs.nanolett.5b02423	journal	August 2015
Standing Waves Induced by Valley-Mismatched Domains in Ferroelectric SnTe Monolayers Chang, Kai; Miller, Brandon J.; Yang, Hao Physical Review Letters, Vol. 122, Issue 20 https://doi.org/10.1103/PhysRevLett.122.206402	journal	May 2019
Recent Advances in 2D Lateral Heterostructures Wang, Jianwei; Li, Zhiqiang; Chen, Haiyuan Nano-Micro Letters, Vol. 11, Issue 1 https://doi.org/10.1007/s40820-019-0276-y	journal	June 2019
The growth and phase distribution of ultrathin SnTe on graphene Chang, Kai; Parkin, Stuart S. P. APL Materials, Vol. 7, Issue 4 https://doi.org/10.1063/1.5091546	journal	April 2019
Complete Separation of Carriers in the GeS/SnS Lateral Heterostructure by Uniaxial Tensile Strain Peng, Lei; Wang, Chan; Qian, Qi ACS Applied Materials & Interfaces, Vol. 9, Issue 46 https://doi.org/10.1021/acsami.7b11613	journal	November 2017
Recent Progress in Two‐Dimensional Ferroelectric Materials Guan, Zhao; Hu, He; Shen, Xinwei Advanced Electronic Materials, Vol. 6, Issue 1 https://doi.org/10.1002/aelm.201900818	journal	November 2019
Atomic layers of hybridized boron nitride and graphene domains Ci, Lijie; Song, Li; Jin, Chuanhong Nature Materials, Vol. 9, Issue 5, p. 430-435 https://doi.org/10.1038/nmat2711	journal	February 2010
Lateral heterostructures of monolayer group-IV monochalcogenides: band alignment and electronic properties Cheng, Kai; Guo, Yu; Han, Nannan Journal of Materials Chemistry C, Vol. 5, Issue 15 https://doi.org/10.1039/C7TC00595D	journal	January 2017
Lateral Heterostructures Formed by Thermally Converting n-Type SnSe ₂ to p-Type SnSe Tian, Zhen; Zhao, Mingxing; Xue, Xiongxiong ACS Applied Materials & Interfaces, Vol. 10, Issue 15 https://doi.org/10.1021/acsami.8b01235	journal	December 2017
Gundlach oscillations and Coulomb blockade of Co nanoislands on MgO/Mo(100) investigated by scanning tunneling spectroscopy at 300 K Pauly, C.; Grob, M.; Pezzotta, M. Physical Review B, Vol. 81, Issue 12 https://doi.org/10.1103/PhysRevB.81.125446	journal	March 2010
Visualizing band offsets and edge states in bilayer–monolayer transition metal dichalcogenides lateral heterojunction Zhang, Chendong; Chen, Yuxuan; Huang, Jing-Kai Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms10349	journal	January 2016
Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors Mahjouri-Samani, Masoud; Lin, Ming-Wei; Wang, Kai Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms8749	journal	July 2015
Observation of a periodic array of flux-closure quadrants in strained ferroelectric PbTiO3 films Tang, Y. L.; Zhu, Y. L.; Ma, X. L. Science, Vol. 348, Issue 6234 https://doi.org/10.1126/science.1259869	journal	April 2015
Sub-10 nm tunneling field-effect transistors based on monolayer group IV mono-chalcogenides Li, Hong; Xu, Peipei; Lu, Jing Nanoscale, Vol. 11, Issue 48 https://doi.org/10.1039/C9NR07590A	journal	January 2019
Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors Xu, Peipei; Liang, Jiakun; Li, Hong RSC Advances, Vol. 10, Issue 27 https://doi.org/10.1039/D0RA02265A	journal	January 2020
Polarization and valley switching in monolayer group-IV monochalcogenides Hanakata, Paul Z.; Carvalho, Alexandra; Campbell, David K. Physical Review B, Vol. 94, Issue 3 https://doi.org/10.1103/PhysRevB.94.035304	journal	July 2016
Structural Phase Transition and Material Properties of Few-Layer Monochalcogenides Mehboudi, Mehrshad; Fregoso, Benjamin M.; Yang, Yurong Physical Review Letters, Vol. 117, Issue 24 https://doi.org/10.1103/PhysRevLett.117.246802	journal	December 2016
Two-Dimensional Ferroelectric Tunnel Junction: The Case of Monolayer In:SnSe/SnSe/Sb:SnSe Homostructure Shen, Xin-Wei; Fang, Yue-Wen; Tian, Bo-Bo ACS Applied Electronic Materials, Vol. 1, Issue 7 https://doi.org/10.1021/acsaelm.9b00146	journal	June 2019
Tunneling through a controllable vacuum gap Binnig, G.; Rohrer, H.; Gerber, Ch. Applied Physics Letters, Vol. 40, Issue 2 https://doi.org/10.1063/1.92999	journal	January 1982

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