Tellurene Photodetector with High Gain and Wide Bandwidth
- Univ. of Southern California, Los Angeles, CA (United States). Ming Hsieh Dept. of Electrical Engineering; OSTI
- Univ. of Southern California, Los Angeles, CA (United States). Ming Hsieh Dept. of Electrical Engineering
- Univ. of Southern California, Los Angeles, CA (United States). Dept. of Physics
- Univ. of Southern California, Los Angeles, CA (United States). Mork Family Dept. of Chemical Engineering and Materials Science
- Purdue Univ., West Lafayette, IN (United States). School of Industrial Engineering
- Kumamoto Univ. (Japan). Dept. of Physics
- Univ. of Southern California, Los Angeles, CA (United States). Collaboratory for Advanced Computing and Simulations
- King Abdulaziz City for Science and Technology, Riyadh (Saudi Arabia). Center of Excellence for Green Nanotechnologies. Joint Centers of Excellence Program; Univ. of California, Los Angeles, CA (United States). Dept. of Electrical Engineering
- Univ. of Jeddah (Saudi Arabia). Dept. of Electrical and Computer Engineering; King Abdulaziz Univ., Jeddah (Saudi Arabia). Dept. of Electrical and Computer Engineering
- Univ. of Southern California, Los Angeles, CA (United States). Ming Hsieh Dept. of Electrical Engineering. Mork Family Dept. of Chemical Engineering and Materials Science
Two-dimensional (2D) semiconductors have been extensively explored as a new class of materials with great potential. In particular, black phosphorus (BP) has been considered to be a strong candidate for applications such as high-performance infrared photodetectors. However, the scalability of BP thin film is still a challenge, and its poor stability in the air has hampered the progress of the commercialization of BP devices. Herein, we report the use of hydrothermal-synthesized and air-stable 2D tellurene nanoflakes for broadband and ultrasensitive photodetection. The tellurene nanoflakes show high hole mobilities up to 458 cm2/V·s at ambient conditions, and the tellurene photodetector presents peak extrinsic responsivity of 383 A/W, 19.2 mA/W, and 18.9 mA/W at 520 nm, 1.55 μm, and 3.39 μm light wavelength, respectively. Because of the photogating effect, high gains up to 1.9 × 103 and 3.15 × 104 are obtained at 520 nm and 3.39 μm wavelength, respectively. At the communication wavelength of 1.55 μm, the tellurene photodetector exhibits an exceptionally high anisotropic behavior, and a large bandwidth of 37 MHz is obtained. The photodetection performance at different wavelength is further supported by the corresponding quantum molecular dynamics (QMD) simulations. Our approach has demonstrated the air-stable tellurene photodetectors that fully cover the short-wave infrared band with ultrafast photoresponse.
- Research Organization:
- Univ. of Southern California, Los Angeles, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0014607
- OSTI ID:
- 1802692
- Journal Information:
- ACS Nano, Journal Name: ACS Nano Journal Issue: 1 Vol. 14; ISSN 1936-0851
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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