Solution-Synthesized High-Mobility Tellurium Nanoflakes for Short-Wave Infrared Photodetectors

Amani, Matin; Tan, Chaoliang; Zhang, George; Zhao, Chunsong; Bullock, James; Song, Xiaohui; Kim, Hyungjin; Shrestha, Vivek Raj; Gao, Yang; Crozier, Kenneth B.; Scott, Mary; Javey, Ali

doi:10.1021/acsnano.8b03424

Title: Solution-Synthesized High-Mobility Tellurium Nanoflakes for Short-Wave Infrared Photodetectors

Journal Article · Mon Jun 18 00:00:00 EDT 2018 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.8b03424· OSTI ID:1638979

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Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences and Dept. of Materials Science and Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry
Univ. of Melbourne (Australia). School of Physics
Department of Electrical and Electronic Engineering, University of Melbourne, Melbourne, Victoria 3010, Australia
Univ. of Melbourne (Australia). School of Physics and Dept. of Electrical and Electronic Engineering

Two-dimensional (2D) materials, particularly black phosphorus (bP), have demonstrated themselves to be excellent candidates for high-performance infrared photodetectors and transistors. However, high-quality bP can be obtained only via mechanical exfoliation from high-temperature- and high-pressure-grown bulk crystals and degrades rapidly when exposed to ambient conditions. In this paper, we report solution-synthesized and air-stable quasi-2D tellurium (Te) nanoflakes for short-wave infrared (SWIR) photodetectors. We perform comprehensive optical characterization via polarization-resolved transmission and reflection measurements and report the absorbance and complex refractive index of Te crystals. It is found that this material is an indirect semiconductor with a band gap of 0.31 eV. From temperature-dependent electrical measurements, we confirm this band-gap value and find that 12 nm thick Te nanoflakes show high hole mobilities of 450 and 1430 cm² V^–1 s^–1 at 300 and 77 K, respectively. Finally, we demonstrate that despite its indirect band gap, Te can be utilized for high-performance SWIR photodetectors by employing optical cavity substrates consisting of Au/Al₂O₃ to dramatically increase the absorption in the semiconductor. By changing the thickness of the Al₂O₃ cavity, the peak responsivity of Te photoconductors can be tuned from 1.4 μm (13 A/W) to 2.4 μm (8 A/W) with a cutoff wavelength of 3.4 μm, fully capturing the SWIR band. An optimized room-temperature specific detectivity (D*) of 2 × 10⁹ cm Hz^1/2 W^–1 is obtained at a wavelength of 1.7 μm.

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Research Organization:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; Defense Advanced Research Projects Agency (DARPA)

Grant/Contract Number:: AC02-05CH11231; HR0011-16-1-0004

OSTI ID:: 1638979

Journal Information:: ACS Nano, Vol. 12, Issue 7; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 219 works

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Title: Solution-Synthesized High-Mobility Tellurium Nanoflakes for Short-Wave Infrared Photodetectors

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