Evaporated SexTe1-x Thin Films with Tunable Bandgaps for Short-Wave Infrared Photodetectors

Tan, Chaoliang; Amani, Matin; Zhao, Chunsong; Hettick, Mark; Song, Xiaohui; Lien, Der‐Hsien; Li, Hao; Yeh, Matthew; Shrestha, Vivek Raj; Crozier, Kenneth B.; Scott, Mary C.; Javey, Ali

doi:10.1002/adma.202001329

Evaporated Se_xTe_1-x Thin Films with Tunable Bandgaps for Short-Wave Infrared Photodetectors

Journal Article · Sun Aug 09 00:00:00 EDT 2020 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202001329· OSTI ID:1782176

Tan, Chaoliang ^[1]; Amani, Matin ^[1]; Zhao, Chunsong ^[1]; Hettick, Mark ^[1]; Song, Xiaohui ^[2]; ^[1]; Li, Hao ^[1]; Yeh, Matthew ^[1]; Shrestha, Vivek Raj ^[3]; Crozier, Kenneth B. ^[3]; Scott, Mary C. ^[2]; ^[1]

Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry
Univ. of Melbourne (Australia)

Semiconducting absorbers in high-performance short-wave infrared (SWIR) photodetectors and imaging sensor arrays are dominated by single-crystalline germanium and III-V semiconductors. However, these materials require complex growth and device fabrication procedures. In this work, thermally evaporated Se_x Te_1- _x alloy thin films with tunable bandgaps for the fabrication of high-performance SWIR photodetectors are reported. From absorption measurements, it is shown that the bandgaps of Se_x Te_1- _x films can be tuned continuously from 0.31 eV (Te) to 1.87 eV (Se). Owing to their tunable bandgaps, the peak responsivity position and photoresponse edge of Se_x Te_1- _x film-based photoconductors can be tuned in the SWIR regime. By using an optical cavity substrate consisting of Au/Al₂ O₃ to enhance its absorption near the bandgap edge, the Se_0.32 Te_0.68 film (an optical bandgap of ≈0.8 eV)-based photoconductor exhibits a cut-off wavelength at ≈1.7 μm and gives a responsivity of 1.5 AW^-1 and implied detectivity of 6.5 × 10¹⁰ cm Hz^1/2 W^-1 at 1.55 μm at room temperature. Importantly, the nature of the thermal evaporation process enables the fabrication of Se_0.32 Te_0.68 -based 42 × 42 focal plane arrays with good pixel uniformity, demonstrating the potential of this unique material system used for infrared imaging sensor systems.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). The Molecular Foundry (TMF)

Sponsoring Organization:: Defense Advanced Research Projects Agency (DARPA); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1782176

Alternate ID(s):: OSTI ID: 1646924

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 38 Vol. 32; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
SexTe1-x thin films
focal plane arrays
photodetectors
short-wave infrared
tunable bandgaps

Evaporated SexTe1-x Thin Films with Tunable Bandgaps for Short-Wave Infrared Photodetectors

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Evaporated Se_xTe_1-x Thin Films with Tunable Bandgaps for Short-Wave Infrared Photodetectors