Ion intercalation engineering of electronic properties of two-dimensional crystals of 2H-TaSe2

Wu, Yueshen; Xing, Hui; Lian, Chao-Sheng; Lian, Hailong; He, Jiaming; Duan, Wenhui; Liu, Jinyu; Mao, Zhiqiang; Liu, Ying

doi:10.1103/physrevmaterials.3.104003

Ion intercalation engineering of electronic properties of two-dimensional crystals of 2H-TaSe₂

Journal Article · Mon Oct 28 00:00:00 EDT 2019 · Physical Review Materials

DOI:https://doi.org/10.1103/physrevmaterials.3.104003· OSTI ID:1802340

^[1]; ^[2]; Lian, Chao-Sheng ^[3]; Lian, Hailong ^[2]; ^[2]; Duan, Wenhui ^[4]; Liu, Jinyu ^[5]; Mao, Zhiqiang ^[6]; Liu, Ying ^[7]

Shanghai Jiao Tong Univ. (China); OSTI
Shanghai Jiao Tong Univ. (China)
Zhengzhou University (China)
Tsinghua Univ., Beijing (China)
Tulane Univ., New Orleans, LA (United States)
Pennsylvania State Univ., University Park, PA (United States)
Shanghai Jiao Tong Univ. (China); Pennsylvania State Univ., University Park, PA (United States); Collaborative Innovation Center of Advanced Microstructures, Nanjing (China)

Ion intercalation was recently used to explore two-dimensional (2D) transition metal dichalcogenides (TMDs) with precise tuning of ion concentration in a field-effect-transistor configuration. However, how to systematically change the properties of 2D TMDs, e.g., superconductivity and charge density waves, by ion intercalation has not been explored. As such, we report in this paper results of electrical transport measurements on 2D crystals of 2H-TaSe₂ intercalated with Li ions that is tuned continuously by ionic gating. Shubnikov–de Haas magnetoconductance oscillation and Hall coefficient measurements on crystals of 2H-TaSe₂ revealed an ion intercalation induced multi- to single-band change in the Fermi surface (FS) topology, deep in the charge density wave phase, resulting in a reduction of the number of independent channels for electronic conduction. A remarkable crossover from weak antilocalization to weak localization tuned by gate voltage or temperature was found and attributed to the ion intercalation induced variations in the spin-orbital coupling and electron-phonon interaction. These observations provide new insight into the enhancement of superconductivity and the suppression of charge density waves in 2D 2H-TaSe₂ induced by ion intercalation and demonstrate furthermore the great potential of ion intercalation for engineering electronic properties of 2D TMDs.

View Accepted Manuscript (DOE)

Research Organization:: Louisiana State Univ., Baton Rouge, LA (United States)

Sponsoring Organization:: Chinese Academy of Sciences (CAS); Ministry of Science and Technology of the People’s Republic of China (MOST); National Natural Science Foundation of China (NSFC); National Science Foundation (NSF); USDOE Office of Science (SC)

Grant/Contract Number:: SC0012432

OSTI ID:: 1802340

Journal Information:: Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 10 Vol. 3; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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