Lithium ion intercalation in thin crystals of hexagonal TaSe2 gated by a polymer electrolyte

Wu, Yueshen; Lian, Hailong; He, Jiaming; Liu, Jinyu; Wang, Shun; Xing, Hui; Mao, Zhiqiang; Liu, Ying

doi:10.1063/1.5008623

Lithium ion intercalation in thin crystals of hexagonal TaSe₂ gated by a polymer electrolyte

Journal Article · Wed Jan 10 04:00:00 EST 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5008623· OSTI ID:1503637

Wu, Yueshen ^[1]; Lian, Hailong ^[2]; ^[2]; ^[3]; Wang, Shun ^[4]; ^[2]; Mao, Zhiqiang ^[3]; Liu, Ying ^[5]

Shanghai Jiao Tong Univ., Shanghai (China); Key Laboratory of Artificial Structures and Quantum Control and Shanghai Center for Complex Physics, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
Shanghai Jiao Tong Univ., Shanghai (China)
Tulane Univ., New Orleans, LA (United States)
Shanghai Jiao Tong Univ., Shanghai (China); Huazhong Univ. of Science and Technology, Wuhan (China)
Shanghai Jiao Tong Univ., Shanghai (China); Pennsylvania State Univ., University Park, PA (United States); Collaborative Innovation Center of Advanced Microstructures, Nanjing (China)

Ionic liquid gating has been used to modify the properties of layered transition metal dichalcogenides (TMDCs), including two-dimensional (2D) crystals of TMDCs used extensively recently in the device work, which has led to observations of properties not seen in the bulk. The main effect comes from the electrostatic gating due to the strong electric field at the interface. In addition, ionic liquid gating also leads to ion intercalation when the ion size of the gate electrolyte is small compared to the interlayer spacing of TMDCs. However, the microscopic processes of ion intercalation have rarely been explored in layered TMDCs. Here, we employed a technique combining photolithography device fabrication and electrical transport measurements on the thin crystals of hexagonal TaSe2 using multiple channel devices gated by a polymer electrolyte LiClO₄/Polyethylene oxide (PEO). The gate voltage and time dependent source-drain resistances of these thin crystals were used to obtain information on the intercalation process, the effect of ion intercalation, and the correlation between the ion occupation of allowed interstitial sites and the device characteristics. We found a gate voltage controlled modulation of the charge density waves and a scattering rate of charge carriers. Furthermore our work suggests that ion intercalation can be a useful tool for layered materials engineering and 2D crystal device design.

View Accepted Manuscript (DOE)

Research Organization:: Louisiana Board of Regents, Baton Rouge, LA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0012432

OSTI ID:: 1503637

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 112; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Figures / Tables (3)

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