Dimensional reduction and ionic gating induced enhancement of superconductivity in atomically thin crystals of 2H-TaSe2

Wu, Yueshen; He, Jiaming; Liu, Jinyu; Xing, Hui; Mao, Zhiqiang; Liu, Ying

doi:10.1088/1361-6528/aaea3b

Dimensional reduction and ionic gating induced enhancement of superconductivity in atomically thin crystals of 2H-TaSe₂

Journal Article · Sun Nov 11 23:00:00 EST 2018 · Nanotechnology

DOI:https://doi.org/10.1088/1361-6528/aaea3b· OSTI ID:1868545

^[1]; ^[2]; Liu, Jinyu ^[3]; Xing, Hui ^[2]; Mao, Zhiqiang ^[4]; Liu, Ying ^[5]

Shanghai Jiao Tong Univ. (China); Pennsylvania State University
Shanghai Jiao Tong Univ. (China)
Tulane Univ., New Orleans, LA (United States)
Tulane Univ., New Orleans, LA (United States); Pennsylvania State Univ., University Park, PA (United States)
Shanghai Jiao Tong Univ. (China); Pennsylvania State Univ., University Park, PA (United States)

The effects of dimensional reduction and ion intercalation on superconductivity (SC) in the presence of charge density waves (CDWs) in two-dimensional crystals of 2H-TaSe₂ were characterized. We prepared atomically thin crystals by mechanical exfoliation and performed electrical transport measurements on devices made by photolithography. The superconducting transition temperature ($$T$$ $$^{SC}_{c}$$) was found to increase monotonically as the thickness decreased, changing from 0.14 K in the bulk to higher than 1.4 K for a 3-nm-thick crystal. Here, the temperature dependence of upper critical field was found to be anomalous. The CDW transition temperature ($$T$$ $$^{CDW}_{c}$$) was found to decrease, but to a less extent than $$T$$ $$^{SC}_{c}$$, from 120 K in the bulk to around 113 K for the 3-nm-thick crystal. In addition, ion intercalation was found to increase $$T$$ $$^{SC}_{c}$$ and suppress $$T$$ $$^{CDW}_{c}$$ in an atomically thin crystal of 2H-TaSe₂. The implications of these findings are discussed. We suggest that dimensional reduction and ion intercalation are potentially effective ways to engineer material properties for layered transition metal chalcogenides.

View Accepted Manuscript (DOE)

Research Organization:: Pennsylvania State Univ., University Park, PA (United States)

Sponsoring Organization:: USDOE; MOST; NSFC; NSF

Grant/Contract Number:: SC0019068

OSTI ID:: 1868545

Alternate ID(s):: OSTI ID: 1613096
OSTI ID: 22881680

Journal Information:: Nanotechnology, Journal Name: Nanotechnology Journal Issue: 3 Vol. 30; ISSN 0957-4484

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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DC Self-Field Critical Current in Superconductor/Dirac-Cone Material/Superconductor Junctions Talantsev, Evgueni Nanomaterials, Vol. 9, Issue 11 https://doi.org/10.3390/nano9111554	journal	November 2019
Doping induced charge density wave in monolayer TiS ₂ and phonon-mediated superconductivity Liao, Ji-Hai; Zhao, Yin-Chang; Zhao, Yu-Jun Journal of Applied Physics, Vol. 127, Issue 4 https://doi.org/10.1063/1.5135615	journal	January 2020
Ion intercalation engineering of electronic properties of two-dimensional crystals of 2 H − TaSe 2 Wu, Yueshen; Xing, Hui; Lian, Chao-Sheng Physical Review Materials, Vol. 3, Issue 10 https://doi.org/10.1103/physrevmaterials.3.104003	journal	October 2019

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36 MATERIALS SCIENCE
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superconductivity