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Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si

Journal Article · · ACS Photonics
 [1];  [2];  [3];  [3];  [3];  [2];  [2];  [4];  [5];  [4];  [2];  [2]
  1. Univ. of California, Santa Barbara, CA (United States); ShanghaiTech Univ. (China); OSTI
  2. Univ. of California, Santa Barbara, CA (United States)
  3. ShanghaiTech Univ. (China)
  4. Hong Kong Univ. (Hong Kong)
  5. Univ. of California, Santa Barbara, CA (United States); Hong Kong Univ. (Hong Kong)

Avalanche photodiodes (APDs) on Si operating at optical communication wavelength band are crucial for the Si-based transceiver application. In this paper, we report the first O-band InAs quantum dot (QD) waveguide APDs monolithically grown on Si with a low dark current of 0.1 nA at unit gain and a responsivity of 0.234 A/W at 1.310 μm at unit gain (-5 V). In the linear gain mode, the APDs have a maximum gain of 198 and show a clear eye diagram up to 8 Gbit/s. These QD-based APDs enjoy the benefit of sharing the same epitaxial layers and processing flow as QD lasers, which could potentially facilitate the integration with laser sources on a Si platform.

Research Organization:
University of California, Santa Barbara, CA (United States)
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Grant/Contract Number:
AR0001042
OSTI ID:
1799136
Journal Information:
ACS Photonics, Journal Name: ACS Photonics Journal Issue: 2 Vol. 7; ISSN 2330-4022
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English

References (26)

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Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates journal April 2016
Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate journal April 2019
High-Performance O-Band Quantum-Dot Semiconductor Optical Amplifiers Directly Grown on a CMOS Compatible Silicon Substrate journal September 2019
Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product journal December 2008
Electrically pumped continuous-wave III–V quantum dot lasers on silicon journal March 2016
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Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si journal August 2018
Recent Advances in Avalanche Photodiodes journal January 2016
Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate journal July 2018
Midwave Infrared Quantum Dot Quantum Cascade Photodetector Monolithically Grown on Silicon Substrate journal September 2018
High-Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaAsSb Type-II Superlattice journal February 2020
High-Speed InGaAs Photodetectors by Selective-Area MOCVD Toward Optoelectronic Integrated Circuits journal April 2014
Low-Threshold Epitaxially Grown 1.3- μ m InAs Quantum Dot Lasers on Patterned (001) Si journal November 2019
InGaAsP/InP Uni-Traveling-Carrier Photodiode at 1064-nm Wavelength journal August 2019
1300 nm Wavelength InAs Quantum Dot Photodetector Grown on Silicon journal January 2012
13-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon journal January 2016
Electrically pumped continuous-wave 13 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates journal January 2017
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III-V on silicon avalanche photodiodes by heteroepitaxy journal January 2019
25  Gbps low-voltage waveguide Si–Ge avalanche photodiode journal January 2016
High-speed uni-traveling carrier photodiode for 2  μm wavelength application journal January 2019
Indium arsenide quantum dot waveguide photodiodes heterogeneously integrated on silicon journal January 2019
Tunable quantum dot lasers grown directly on silicon journal January 2019
25 Gbps low-voltage waveguide Si–Ge avalanche photodiode collection January 2017

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