Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si
- Univ. of California, Santa Barbara, CA (United States); ShanghaiTech Univ. (China); OSTI
- Univ. of California, Santa Barbara, CA (United States)
- ShanghaiTech Univ. (China)
- Hong Kong Univ. (Hong Kong)
- Univ. of California, Santa Barbara, CA (United States); Hong Kong Univ. (Hong Kong)
Avalanche photodiodes (APDs) on Si operating at optical communication wavelength band are crucial for the Si-based transceiver application. In this paper, we report the first O-band InAs quantum dot (QD) waveguide APDs monolithically grown on Si with a low dark current of 0.1 nA at unit gain and a responsivity of 0.234 A/W at 1.310 μm at unit gain (-5 V). In the linear gain mode, the APDs have a maximum gain of 198 and show a clear eye diagram up to 8 Gbit/s. These QD-based APDs enjoy the benefit of sharing the same epitaxial layers and processing flow as QD lasers, which could potentially facilitate the integration with laser sources on a Si platform.
- Research Organization:
- University of California, Santa Barbara, CA (United States)
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- Grant/Contract Number:
- AR0001042
- OSTI ID:
- 1799136
- Journal Information:
- ACS Photonics, Journal Name: ACS Photonics Journal Issue: 2 Vol. 7; ISSN 2330-4022
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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