Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si

Journal Article · Thu Aug 30 00:00:00 EDT 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5041908· OSTI ID:1467770

Inoue, D.; Wan, Y.; Jung, D.; Norman, J. ; Shang, C.; Nishiyama, N.; Arai, S.; Gossard, A. C.; Bowers, J. E.

We demonstrate 10 Gbit/s operation of InAs/InGaAs quantum dot (QD) p-i-n photodiodes (PDs) grown on on-axis (001) GaP/Si substrates. A 3.0 × 50 μm2 QD PD shows a small dark current of 0.2 nA at a bias voltage of −3 V, which corresponds to a dark current density of 0.13 mA/cm2. This low-dark current characteristic obtained from a narrow-stripe device indicates that sidewall and threading dislocations have small effects on the dark current. The 3 dB bandwidth was 5.5 GHz at a bias voltage of −5 V. Large signal measurement with non-return-to-zero signals shows 10 Gbit/s eye opening.

• Sponsoring Organization: USDOE Advanced Research Projects Agency - Energy (ARPA-E)
• Grant/Contract Number: AR000067
• OSTI ID: 1467770
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 113 Journal Issue: 9; ISSN 0003-6951
• Publisher: American Institute of Physics
• Country of Publication: United States
• Language: English