Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si

Inoue, D.; Wan, Y.; Jung, D.; Norman, J.; Shang, C.; Nishiyama, N.; Arai, S.; Gossard, A. C.; Bowers, J. E.

doi:10.1063/1.5041908

Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si

Journal Article · Thu Aug 30 00:00:00 EDT 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5041908· OSTI ID:1467770

Inoue, D.; Wan, Y.; Jung, D.; ; Shang, C.; Nishiyama, N.; Arai, S.; Gossard, A. C.; Bowers, J. E.

We demonstrate 10 Gbit/s operation of InAs/InGaAs quantum dot (QD) p-i-n photodiodes (PDs) grown on on-axis (001) GaP/Si substrates. A 3.0 × 50 μm2 QD PD shows a small dark current of 0.2 nA at a bias voltage of −3 V, which corresponds to a dark current density of 0.13 mA/cm2. This low-dark current characteristic obtained from a narrow-stripe device indicates that sidewall and threading dislocations have small effects on the dark current. The 3 dB bandwidth was 5.5 GHz at a bias voltage of −5 V. Large signal measurement with non-return-to-zero signals shows 10 Gbit/s eye opening.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI ID:: 1467770

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 113; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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