High Speed Evanescent Quantum‐Dot Lasers on Si

Wan, Yating; Xiang, Chao; Guo, Joel; Koscica, Rosalyn; Kennedy, MJ; Selvidge, Jennifer; Zhang, Zeyu; Chang, Lin; Xie, Weiqiang; Huang, Duanni; Gossard, Arthur C.; Bowers, John E.

doi:10.1002/lpor.202100057

High Speed Evanescent Quantum‐Dot Lasers on Si

Journal Article · Sun Jun 27 00:00:00 EDT 2021 · Laser & Photonics Reviews

DOI:https://doi.org/10.1002/lpor.202100057· OSTI ID:1798923

^[1]; Xiang, Chao ^[2]; Guo, Joel ^[2]; Koscica, Rosalyn ^[3]; Kennedy, MJ ^[2]; Selvidge, Jennifer ^[3]; Zhang, Zeyu ^[2]; Chang, Lin ^[2]; Xie, Weiqiang ^[2]; Huang, Duanni ^[4]; Gossard, Arthur C. ^[5]; Bowers, John E. ^[5]

Institute for Energy Efficiency University of California Santa Barbara Santa Barbara CA 93106 USA, Department of Electrical and Computer Engineering University of California Santa Barbara Santa Barbara CA 93106 USA
Department of Electrical and Computer Engineering University of California Santa Barbara Santa Barbara CA 93106 USA
Materials department University of California Santa Barbara Santa Barbara CA 93106 USA
Intel Corporation 2200 Mission College Blvd. Santa Clara CA 95054 USA
Institute for Energy Efficiency University of California Santa Barbara Santa Barbara CA 93106 USA, Department of Electrical and Computer Engineering University of California Santa Barbara Santa Barbara CA 93106 USA, Materials department University of California Santa Barbara Santa Barbara CA 93106 USA

Abstract

Significant improvements in III–V/Si epitaxy have pushed quantum dots (QDs) to the forefront of Si photonics. For efficient, scalable, and multifunctional integrated systems to be developed, a commercially viable solution must be found to allow efficient coupling of the QD laser output to Si waveguides. In this work, the design, fabrication, and characterization of such a platform are detailed. Record‐setting evanescent QD distributed feedback lasers on Si with a 3 dB modulation bandwidth of 13 GHz, a threshold current of 4 mA, a side‐mode‐suppression‐ratio of 60 dB, and a fundamental linewidth of 26 kHz, are reported. The maximum temperature during the backend III/V process is only 200 °C, which is fully compatible with CMOS process thermal budgets. The whole process is substrate agnostic and hence can leverage previous development in QD lasers grown on Si and benefit from the economy of scale. The broadband and versatile nature of the QD lasers and the Si‐on‐insulator low‐loss waveguiding platform can be expanded to build fully functional photonic integrated circuits throughout the O band.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AR0001039

OSTI ID:: 1798923

Alternate ID(s):: OSTI ID: 1848348

Journal Information:: Laser & Photonics Reviews, Journal Name: Laser & Photonics Reviews Journal Issue: 8 Vol. 15; ISSN 1863-8880

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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