1.3&nbsp;µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si

Wan, Yating; Norman, Justin C.; Tong, Yeyu; Kennedy, M. J.; He, William; Selvidge, Jenny; Shang, Chen; Dumont, Mario; Malik, Aditya; Tsang, Hon Ki; Gossard, Arthur C.; Bowers, John E.

doi:10.1002/lpor.202000037

1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si

Journal Article · Mon Jun 08 00:00:00 EDT 2020 · Laser & Photonics Reviews

DOI:https://doi.org/10.1002/lpor.202000037· OSTI ID:1632246

^[1]; Norman, Justin C. ^[2]; Tong, Yeyu ^[3]; Kennedy, M. J. ^[4]; He, William ^[4]; Selvidge, Jenny ^[2]; Shang, Chen ^[2]; Dumont, Mario ^[4]; Malik, Aditya ^[4]; Tsang, Hon Ki ^[5]; Gossard, Arthur C. ^[6]; Bowers, John E. ^[6]

Institute for Energy Efficiency University of California Santa Barbara Santa Barbara CA 93106 USA
Materials Department University of California Santa Barbara Santa Barbara CA 93106 USA
Department of Electrical and Computer Engineering University of California Santa Barbara Santa Barbara CA 93106 USA, Department of Electronic Engineering The Chinese University of Hong Kong Shatin Hong Kong 999077 P. R. China
Department of Electrical and Computer Engineering University of California Santa Barbara Santa Barbara CA 93106 USA
Department of Electronic Engineering The Chinese University of Hong Kong Shatin Hong Kong 999077 P. R. China
Institute for Energy Efficiency University of California Santa Barbara Santa Barbara CA 93106 USA, Materials Department University of California Santa Barbara Santa Barbara CA 93106 USA, Department of Electrical and Computer Engineering University of California Santa Barbara Santa Barbara CA 93106 USA

Abstract

Distributed feedback (DFB) lasers represent a central focus for wavelength‐division‐multiplexing‐based transceivers in metropolitan networks. Here, the first 1.3 µm quantum dot (QD) DFB lasers grown on a complementary metal‐oxide‐semiconductor (CMOS)‐compatible (001) Si substrate are reported. Temperature‐stable, single‐longitudinal‐mode operation is achieved with a side‐mode suppression ratio of more than 50 dB and a threshold current density of 440 A cm ⁻² . A single‐lane rate of 128 Gbit s ⁻¹ with a net spectral efficiency of 1.67 bits ⁻¹ Hz ⁻¹ is demonstrated, with an aggregate total transmission capacity of 640 Gbit s ⁻¹ using five channels in the O‐band. Apart from the QD active region growth, the overall fabrication is essentially identical to the commercial process for quantum well (QW) DFB lasers. This provides a process‐compatible path for QD technology into commercial applications previously filled by QW devices. In addition, the capability to grow laser epi across entire CMOS‐compatible (001) Si wafers adds extra benefits of reduced cost, improved heat dissipation, and manufacturing scalability. Through direct epitaxial integration of III–Vs and Si, one can envision a revolution of the photonics industry in the same way that CMOS design and processing revolutionize the microelectronics industry. This is discussed from a system perspective for on‐chip optical interconnects.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AR0001039; AR0001042

OSTI ID:: 1632246

Alternate ID(s):: OSTI ID: 1799133

Journal Information:: Laser & Photonics Reviews, Journal Name: Laser & Photonics Reviews Journal Issue: 7 Vol. 14; ISSN 1863-8880

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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