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Multiscale System Modeling of Single-Event-Induced Faults in Advanced Node Processors

Journal Article · · IEEE Transactions on Nuclear Science
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  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
  3. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  4. Arizona State Univ., Tempe, AZ (United States)
+ Show Author Affiliations

Integration-technology feature shrink increases computing-system susceptibility to single-event effects (SEE). While modeling SEE faults will be critical, an integrated processor’s scope makes physically correct modeling computationally intractable. Without useful models, presilicon evaluation of fault-tolerance approaches becomes impossible. To incorporate accurate transistor-level effects at a system scope, we present a multiscale simulation framework. Charge collection at the 1) device level determines 2) circuit-level transient duration and state-upset likelihood. Circuit effects, in turn, impact 3) register-transfer-level architecture-state corruption visible at 4) the system level. Furthermore, the physically accurate effects of SEEs in large-scale systems, executed on a high-performance computing (HPC) simulator, could be used to drive cross-layer radiation hardening by design. We demonstrate the capabilities of this model with two case studies. First, we determine a D flip-flop’s sensitivity at the transistor level on 14-nm FinFet technology, validating the model against published cross sections. Second, we track and estimate faults in a microprocessor without interlocked pipelined stages (MIPS) processor for Adams 90% worst case environment in an isotropic space environment.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1787522
Report Number(s):
SAND-2021-4082J; 695305
Journal Information:
IEEE Transactions on Nuclear Science, Vol. 68, Issue 5; ISSN 0018-9499
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
Fault modeling
single-event effects (SEEs)
single-event transient (SET)
single-event upset (SEU)
structural simulation toolkit (SST)