Hybrid MEMS-CMOS ion traps for NISQ computing

Blain, M. G.; Haltli, R.; Maunz, P.; Nordquist, C. D.; Revelle, M.; Stick, D.

doi:10.1088/2058-9565/ac01bb

Hybrid MEMS-CMOS ion traps for NISQ computing

Journal Article · Thu Jun 17 00:00:00 EDT 2021 · Quantum Science and Technology

DOI:https://doi.org/10.1088/2058-9565/ac01bb· OSTI ID:1787511

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Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Surging interest in engineering quantum computers has stimulated significant and focused research on technologies needed to make them manufacturable and scalable. In the ion trap realm this has led to a transition from bulk three-dimensional macro-scale traps to chip-based ion traps and included important demonstrations of passive and active electronics, waveguides, detectors, and other integrated components. At the same time as these technologies are being developed the system sizes are demanding more ions to run noisy intermediate scale quantum (NISQ) algorithms, growing from around ten ions today to potentially a hundred or more in the near future. To realize the size and features needed for this growth, the geometric and material design space of microfabricated ion traps must expand. In this paper we describe present limitations and the approaches needed to overcome them, including how geometric complexity drives the number of metal levels, why routing congestion affects the size and location of shunting capacitors, and how RF power dissipation can limit the size of the trap array. Finally, we also give recommendations for future research needed to accommodate the demands of NISQ scale ion traps that are integrated with additional technologies.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1787511

Report Number(s):: SAND--2021-5397J; 695973

Journal Information:: Quantum Science and Technology, Journal Name: Quantum Science and Technology Journal Issue: 3 Vol. 6; ISSN 2058-9565

Publisher:: IOPscienceCopyright Statement

Country of Publication:: United States

Language:: English

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71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
MEMS-CMOS
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hybrid
integrated photonics
ion trap
quantum computing

Hybrid MEMS-CMOS ion traps for NISQ computing

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