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Prospects for sub-nanometer scale imaging of optical phenomena using electron microscopy

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/5.0029979· OSTI ID:1782091
 [1];  [2];  [1];  [1];  [3];  [4]
  1. Stanford Univ., CA (United States). Dept. of Mechanical Engineering
  2. Univ. of Illinois at Urbana-Champaign, IL (United States). Dep. of Mechanical Science and Engineering
  3. Univ. of Illinois at Urbana-Champaign, IL (United States). Dep. of Mechanical Science and Engineering; Univ. of Illinois at Urbana-Champaign, IL (United States). Beckman Inst. for Advanced Science and Technology
  4. Stanford Univ., CA (United States). Dept. of Mechanical Engineering; SLAC National Accelerator Lab., Menlo Park, CA (United States). Dept. of Photon Science; Stanford Univ., CA (United States). Precourt Institute for Energy

Imaging of optical phenomena at the sub-nanometer scale can offer fundamental insights into the electronic or vibrational states in atomic-scale defects, molecules, and nanoparticles, which are important in quantum information, heterogeneous catalysis, optoelectronics, and structural biology. Several techniques have surpassed the traditional Abbe diffraction limit and attained spatial resolutions down to a few nanometers, but sub-nanometer scale optics has remained elusive. Here, we propose an approach that combines spectrally specific photoabsorption with sub-nanometer scale resolution transmission electron microscopy (TEM) of photoexcited electrons. We first estimate the signal level and conditions required for imaging nanoscale optical phenomena in core-shell quantum dots (QDs) like CdS/CdTe. Furthermore, we show the possibility of imaging photoexcited states of atomic-scale defects in a monolayer hexagonal boron nitride (h-BN) using ab initio and high resolution (HR)TEM simulations. The ability to directly visualize photoexcited states at the sub-nanometer scale opens opportunities to study properties of individual quantum dots and atomic defects.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-76SF00515; SC0019112
OSTI ID:
1782091
Alternate ID(s):
OSTI ID: 1761252
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 118; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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