Carrier dynamics and activation energy of CdTe quantum dots in a Cd{sub x}Zn{sub 1-x}Te quantum well

Journal Article · Mon Dec 05 00:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3669412· OSTI ID:22027832

Han, W I; Lee, J H; Yu, J S; Choi, J C ^[1]; Lee, H S ^[2]

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1. Department of Physics, Yonsei University, Wonju 220-710 (Korea, Republic of)
2. Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

We investigate the optical properties of CdTe quantum dots (QDs) in a Cd{sub 0.3}Zn{sub 0.7}Te quantum well (QW) grown on GaAs (100) substrates. Carrier dynamics of CdTe/ZnTe QDs and quantum dots-in-a-well (DWELL) structure is studied using time-resolved photoluminescence (PL) measurements, which show the longer exciton lifetime of the DWELL structure. The activation energy of the electrons confined in the DWELL structure, as obtained from the temperature-dependent PL spectra, was also higher than that of electrons confined in the CdTe/ZnTe QDs. This behavior is attributed to the better capture of carriers into QDs within the surrounding QW.

• OSTI ID: 22027832
• Journal Information: Applied Physics Letters, Vol. 99, Issue 23; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ACTIVATION ENERGY
CADMIUM TELLURIDES
CHARGE CARRIERS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
ELECTRONS
GALLIUM ARSENIDES
LAYERS
LIFETIME
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM DOTS
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE DEPENDENCE
TIME RESOLUTION
ZINC TELLURIDES