In the field of high-power electronics, gallium oxide (Ga2O3) is attracting attention due to its wide band gap and ability to be doped n-type. Point defects, including vacancies, impurities, and dopants, play important roles in optimizing device performance. This tutorial discusses the fundamental properties of point defects in monoclinic β-Ga2O3 and the methods employed to study them. Oxygen vacancies are deep donors that do not cause n-type conductivity but may compensate acceptors. Gallium vacancies are deep acceptors that can be partially passivated by hydrogen. Substitutional magnesium is a promising acceptor that produces semi-insulating material and also forms a complex with hydrogen. Calcium and iron also have deep acceptor levels. Iridium deep donors are introduced into crystals grown from a melt in an Ir crucible. Here, other defects are introduced by irradiation with energetic particles such as neutrons or protons. In addition to altering the electronic properties, defects give rise to UV/visible emission bands in photoluminescence and cathodoluminescence spectra.
McCluskey, Matthew D.. "Point defects in Ga<sub>2</sub>O<sub>3</sub>." Journal of Applied Physics, vol. 127, no. 10, Mar. 2020. https://doi.org/10.1063/1.5142195
McCluskey, Matthew D., "Point defects in Ga<sub>2</sub>O<sub>3</sub>," Journal of Applied Physics 127, no. 10 (2020), https://doi.org/10.1063/1.5142195
@article{osti_1766570,
author = {McCluskey, Matthew D.},
title = {Point defects in Ga<sub>2</sub>O<sub>3</sub>},
annote = {In the field of high-power electronics, gallium oxide (Ga2O3) is attracting attention due to its wide band gap and ability to be doped n-type. Point defects, including vacancies, impurities, and dopants, play important roles in optimizing device performance. This tutorial discusses the fundamental properties of point defects in monoclinic β-Ga2O3 and the methods employed to study them. Oxygen vacancies are deep donors that do not cause n-type conductivity but may compensate acceptors. Gallium vacancies are deep acceptors that can be partially passivated by hydrogen. Substitutional magnesium is a promising acceptor that produces semi-insulating material and also forms a complex with hydrogen. Calcium and iron also have deep acceptor levels. Iridium deep donors are introduced into crystals grown from a melt in an Ir crucible. Here, other defects are introduced by irradiation with energetic particles such as neutrons or protons. In addition to altering the electronic properties, defects give rise to UV/visible emission bands in photoluminescence and cathodoluminescence spectra.},
doi = {10.1063/1.5142195},
url = {https://www.osti.gov/biblio/1766570},
journal = {Journal of Applied Physics},
issn = {ISSN 0021-8979},
number = {10},
volume = {127},
place = {United States},
publisher = {American Institute of Physics (AIP)},
year = {2020},
month = {03}}