Electron irradiation effects on the optical properties of Hf- and Zn-doped β-Ga2O3

Remple, Cassandra; Huso, Jesse; Weber, Marc H.; McCloy, John S.; McCluskey, Matthew D.

doi:10.1063/5.0196824

Electron irradiation effects on the optical properties of Hf- and Zn-doped β-Ga₂O₃

Journal Article · Wed May 08 00:00:00 EDT 2024 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0196824· OSTI ID:2476682

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Washington State University, Pullman, WA (United States)
Klar Scientific, Pullman, WA (United States)
Washington State University, Pullman, WA (United States); Klar Scientific, Pullman, WA (United States)

Optical and electrical properties of Hf- and Zn-doped β-Ga₂O₃ samples, which are n-type and insulating, respectively, were altered via high-energy electron irradiation at 2.5 or 0.5 MeV. The β-Ga₂O₃:Hf samples irradiated with 2.5 MeV electrons experienced a color change from blue to yellow and a large drop in conductivity, attributed to the creation of gallium vacancies, which compensate donors. This irradiation resulted in the absence of free carrier absorption and the presence of Cr³⁺ photoluminescence (PL). PL mapping prior to irradiation revealed optically active ZnO precipitates that formed during the growth of β-Ga₂O₃:Zn. These precipitates have a 384 nm (3.23 eV) stacking fault emission in the core; in the outer shell of the precipitate, the PL blue-shifts to 377 nm (3.29 eV) and a broad defect band is observed. After 0.5 MeV electron irradiation, the defect band broadened and increased in intensity. The blue PL band (435 nm) of β-Ga₂O₃ was enhanced for both Hf- and Zn-doped samples irradiated with 0.5 MeV. This enhancement is correlated with an increase in oxygen vacancies.

View Accepted Manuscript (DOE)

Research Organization:: Washington State University, Pullman, WA (United States)

Sponsoring Organization:: Air Force Office of Scientific Research (AFOSR); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

Grant/Contract Number:: FG02-07ER46386

OSTI ID:: 2476682

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 18 Vol. 135; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Electron irradiation effects on the optical properties of Hf- and Zn-doped β-Ga2O3

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