Photoluminescence and Raman mapping of β-Ga2O3

Remple, Cassandra; Huso, Jesse; McCluskey, Matthew D.

doi:10.1063/5.0065618

Photoluminescence and Raman mapping of β-Ga₂O₃

Journal Article · Thu Oct 07 00:00:00 EDT 2021 · AIP Advances

DOI:https://doi.org/10.1063/5.0065618· OSTI ID:1829319

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Washington State Univ., Pullman, WA (United States); Washington State University
Klar Scientific, Pullman, WA (United States)
Washington State Univ., Pullman, WA (United States); Klar Scientific, Pullman, WA (United States)

Semi-insulating single crystal β-Ga₂O₃ is becoming increasingly useful as a substrate for device fabrication. Fe doping is a method for producing such substrates. Along with Fe dopants, β-Ga₂O₃:Fe also contains Cr³⁺. Photoluminescence (PL) emission peaks at 690 nm (1.80 eV) and 696 nm (1.78 eV), as well as a broad feature around 709 nm (1.75 eV), are observed in β-Ga₂O₃:Fe. PL mapping of the 690 nm emission showed high and low intensity bands due to impurity striations introduced during crystal growth. PL mapping also revealed surface defects showing broad emissions around 983 nm (1.26 eV) and 886 nm (1.40 eV) that were spatially localized, occurring at discrete spots on the sample surface. Raman mapping of an 886 nm emission center revealed peaks at 2878 and 2930 cm^-1, consistent with an organometallic or hydrocarbon compound. Raman mapping of the 983 nm center showed a peak at 2892 cm^-1. Bright UV emission centers showed Raman peaks at 2910 and 2968 cm^-1, which are attributed to Si-CH₃ groups that may originate from silica polishing compounds or annealing in a silica ampoule.

View Accepted Manuscript (DOE)

Research Organization:: Washington State Univ., Pullman, WA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: FG02-07ER46386

OSTI ID:: 1829319

Alternate ID(s):: OSTI ID: 1824878

Journal Information:: AIP Advances, Journal Name: AIP Advances Journal Issue: 10 Vol. 11; ISSN 2158-3226

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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