Intrinsic two-way shape memory effect in a Ni-Mn-Sn metamagnetic shape memory microwire
Journal Article
·
· Journal of Materials Science and Technology
- Univ. of Science and Technology Beijing (China)
- Argonne National Lab. (ANL), Argonne, IL (United States)
We report an intrinsic two-way shape memory effect with a fully recoverable strain of 1.0% was achieved in an as-prepared Ni50Mn37.5Sn12.5 metamagnetic shape memory microwire fabricated by Taylor-Ulitovsky method. This two-way shape memory effect is mainly owing to the internal stress caused by the retained martensite in austenite matrix, as revealed by transmission electron microscopy observations and high-energy X-ray diffraction experiments. After superelastic training for 30 loading/unloading cycles at room temperature, the amount of retained martensite increased and the recoverable strain of two-way shape memory effect increased significantly to 2.2%. Furthermore, a giant recoverable strain of 11.2% was attained under a bias stress of 300 MPa in the trained microwire. These properties confer this microwire great potential for micro-actuation applications.
- Research Organization:
- Argonne National Laboratory (ANL)
- Sponsoring Organization:
- Fundamental Research Funds for the Central Universities; National Natural Science Foundation of China (NSFC); USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1756161
- Journal Information:
- Journal of Materials Science and Technology, Journal Name: Journal of Materials Science and Technology Vol. 45; ISSN 1005-0302
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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