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Title: Intrinsic two-way shape memory effect in a Ni-Mn-Sn metamagnetic shape memory microwire

Journal Article · · Journal of Materials Science and Technology

We report an intrinsic two-way shape memory effect with a fully recoverable strain of 1.0% was achieved in an as-prepared Ni50Mn37.5Sn12.5 metamagnetic shape memory microwire fabricated by Taylor-Ulitovsky method. This two-way shape memory effect is mainly owing to the internal stress caused by the retained martensite in austenite matrix, as revealed by transmission electron microscopy observations and high-energy X-ray diffraction experiments. After superelastic training for 30 loading/unloading cycles at room temperature, the amount of retained martensite increased and the recoverable strain of two-way shape memory effect increased significantly to 2.2%. Furthermore, a giant recoverable strain of 11.2% was attained under a bias stress of 300 MPa in the trained microwire. These properties confer this microwire great potential for micro-actuation applications.

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Organization:
National Natural Science Foundation of China (NSFC); Fundamental Research Funds for the Central Universities; USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-06CH11357; FRF-TP-18-008C1
OSTI ID:
1756161
Journal Information:
Journal of Materials Science and Technology, Vol. 45; ISSN 1005-0302
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

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