Novel Techniques for Silicon Doping Profiling (U)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
The purpose of this one-year LDRD was to investigate the use of the helium ion microscope (HeIM) for imaging dopant profiles in silicon relevant to integrated circuit technologies. HeIM is a new technology that offers improved spatial resolution over scanning electron microscopy and different beam-solid interaction physics which leads to unique contrast mechanisms. Two parallel thrusts were pursued: 1) traditional imaging via the secondary electron signal and 2) a novel topographical approach. To obtain the experimental details and results, please refer to the classified report from the project manager, Ed Cole, or the Cyber IA lead, Justin Ford.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1733248
- Report Number(s):
- SAND--2016-11896; 649420
- Country of Publication:
- United States
- Language:
- English
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