Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates

Liu, Yafei; Raghothamachar, Balaji; Peng, Hongyu; Ailihumaer, Tuerxun; Dudley, Michael; Collazo, Ramon; Tweedie, James; Sitar, Zlatko; Shadi Shahedipour-Sandvik, F.; Jones, Kenneth A.; Armstrong, Andrew; Allerman, Andrew A.; Grabianska, Karolina; Kucharski, Robert; Bockowski, Michal

doi:10.1016/j.jcrysgro.2020.125903

Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates

Journal Article · Fri Oct 09 00:00:00 EDT 2020 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2020.125903· OSTI ID:1725832

Liu, Yafei ^[1]; ^[1]; Peng, Hongyu ^[1]; Ailihumaer, Tuerxun ^[1]; Dudley, Michael ^[1]; Collazo, Ramon ^[2]; Tweedie, James ^[3]; Sitar, Zlatko ^[4]; Shadi Shahedipour-Sandvik, F. ^[5]; Jones, Kenneth A. ^[6]; Armstrong, Andrew ^[7]; Allerman, Andrew A. ^[7]; ^[8]; Kucharski, Robert ^[8]; Bockowski, Michal ^[8]

Stony Brook Univ., NY (United States)
North Carolina State Univ., Raleigh, NC (United States)
Adroit Materials, Inc., Cary, NC (United States)
North Carolina State Univ., Raleigh, NC (United States); Adroit Materials, Inc., Cary, NC (United States)
SUNY Polytechnic Inst., Albany, NY (United States)
Army Research Lab., Adelphi, MD (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Polish Academy of Sciences, Warsaw (Poland)

Ammonothermal growth of bulk gallium nitride (GaN) crystals is considered the most suitable method to meet the demand for high quality bulk substrates for power electronics. A non-destructive evaluation of defect content in state-of-the-art ammonothermal substrates has been carried out by synchrotron X-ray topography. Using a monochromatic beam in grazing incidence geometry, high resolution X-ray topographs reveal the various dislocation types present. Ray-tracing simulations that were modified to take both surface relaxation and absorption effects into account allowed improved correlation with observed dislocation contrast so that the Burgers vectors of the dislocations could be determined. The images show the very high quality of the ammonothermal GaN substrate wafers which contain low densities of threading dislocations (TDs) but are free of basal plane dislocations (BPDs). Furthermore, threading mixed dislocations (TMDs) were found to be dominant among the TDs, and the overall TD density (TDD) of a 1-inch wafer was found to be as low as 5.16 × 10³ cm^-2.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; AR0001115; AC02-06CH11357; NA0003525

OSTI ID:: 1725832

Alternate ID(s):: OSTI ID: 1701778
OSTI ID: 1775945

Report Number(s):: SAND--2020-11418J; 692135

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 551; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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