X-ray topography characterization of gallium nitride substrates for power device development

Raghothamachar, Balaji; Liu, Yafei; Peng, Hongyu; Ailihumaer, Tuerxun; Dudley, Michael; Shahedipour-Sandvik, F. Shadi; Jones, Kenneth A.; Armstrong, Andrew; Allerman, Andrew A.; Han, Jung; Fu, Houqiang; Fu, Kai; Zhao, Yuji

doi:10.1016/j.jcrysgro.2020.125709

X-ray topography characterization of gallium nitride substrates for power device development

Journal Article · Tue May 19 00:00:00 EDT 2020 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2020.125709· OSTI ID:1634813

^[1]; Liu, Yafei ^[1]; Peng, Hongyu ^[1]; Ailihumaer, Tuerxun ^[1]; Dudley, Michael ^[1]; Shahedipour-Sandvik, F. Shadi ^[2]; Jones, Kenneth A. ^[3]; Armstrong, Andrew ^[4]; Allerman, Andrew A. ^[4]; Han, Jung ^[5]; Fu, Houqiang ^[6]; Fu, Kai ^[6]; Zhao, Yuji ^[6]

Stony Brook Univ., NY (United States)
State Univ. of New York Polytechnic Inst., Albany New York
Army Research Lab., Adelphi, MD (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Yale Univ., New Haven, CT (United States)
Arizona State Univ., Tempe, AZ (United States)

Gallium nitride substrates grown by the hydride vapor phase epitaxy (HVPE) method using a patterned growth process have been characterized by synchrotron monochromatic beam X-ray topography in the grazing incidence geometry. Images reveal a starkly heterogeneous distribution of dislocations with areas as large as 0 3 mm² containing threading dislocation densities below 10³ cm^-2 in between a grid of strain centers with higher threading dislocation densities (> 10⁴ cm^-2). Basal plane dislocation densities in these areas are as low as 104 cm^-2. By comparing the recorded images of dislocations with ray tracing simulations of expected dislocations in GaN, the Burgers vectors of the dislocations have been determined. The distribution of threading screw/mixed dislocations (TSDs/TMDs), threading edge dislocations (TEDs) and basal plane dislocations (BPDs) is discussed with implications for fabrication of power devices.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1634813

Alternate ID(s):: OSTI ID: 1775944

Report Number(s):: SAND2020--6126J; 686719

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: C Vol. 544; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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