Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices

Hashimoto, Tadao; Letts, Edward R.; Key, Daryl

doi:10.3390/cryst12081085

Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices

Journal Article · Wed Aug 03 00:00:00 EDT 2022 · Crystals

DOI:https://doi.org/10.3390/cryst12081085· OSTI ID:1879785

Hashimoto, Tadao; Letts, Edward R.; Key, Daryl

This paper reviews the near-equilibrium ammonothermal (NEAT) growth of bulk gallium nitride (GaN) crystals and reports the evaluation of 2″ GaN substrates and 100 mmbulk GaN crystal grown in our pilot production reactor. Recent progress in oxygen reduction enabled growing NEAT GaN substrates with lower residual oxygen, coloration, and optical absorption. The oxygen concentration was approximately 2 × 1018 cm−2, and the optical absorption coefficient was 1.3 cm−1 at 450 nm. Maps of full-width half maximum (FWHM) of X-ray diffraction rocking curveswere generated for grown crystals and finished wafers. The X-ray rocking curve maps confirmed high-quality and uniform microstructure across the entire surface of the bulk crystals and substrates. The average FWHM of the 50 best bulk crystals from the recent batch was 28 ± 4 arcsec for the 002 diffraction and 34 ± 5 arcsec for the 201 diffraction, with an average radius of curvature of 20 m. X-ray topography measured on both sides of the bulk crystals implied that the density of dislocations wasreduced by one order of magnitude during the NEAT growth. A typical NEAT GaN substrate shows dislocation density of about 2 × 105 cm−2.

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000445; AR0001008; SC0013791

OSTI ID:: 1879785

Alternate ID(s):: OSTI ID: 1981118

Journal Information:: Crystals, Journal Name: Crystals Journal Issue: 8 Vol. 12; ISSN CRYSBC; ISSN 2073-4352

Publisher:: MDPI AGCopyright Statement

Country of Publication:: Germany

Language:: English

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