Highly transparent ammonothermal bulk GaN substrates

Journal Article · Wed Oct 01 04:00:00 EDT 2014 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2014.06.002· OSTI ID:1211057

Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

• Sponsoring Organization: USDOE Advanced Research Projects Agency - Energy (ARPA-E)
• DOE Contract Number: AR0000020
• OSTI ID: 1211057
• Journal Information: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 403; ISSN 0022-0248
• Country of Publication: United States
• Language: English