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Title: Highly transparent ammonothermal bulk GaN substrates

Abstract

A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

Authors:
; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1211057
DOE Contract Number:
DE AR0000020
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Crystal Growth; Journal Volume: 403
Country of Publication:
United States
Language:
English

Citation Formats

Jiang, WK, Ehrentraut, D, Downey, BC, Kamber, DS, Pakalapati, RT, Do Yoo, H, and D'Evelyn, MP. Highly transparent ammonothermal bulk GaN substrates. United States: N. p., 2014. Web. doi:10.1016/j.jcrysgro.2014.06.002.
Jiang, WK, Ehrentraut, D, Downey, BC, Kamber, DS, Pakalapati, RT, Do Yoo, H, & D'Evelyn, MP. Highly transparent ammonothermal bulk GaN substrates. United States. doi:10.1016/j.jcrysgro.2014.06.002.
Jiang, WK, Ehrentraut, D, Downey, BC, Kamber, DS, Pakalapati, RT, Do Yoo, H, and D'Evelyn, MP. 2014. "Highly transparent ammonothermal bulk GaN substrates". United States. doi:10.1016/j.jcrysgro.2014.06.002.
@article{osti_1211057,
title = {Highly transparent ammonothermal bulk GaN substrates},
author = {Jiang, WK and Ehrentraut, D and Downey, BC and Kamber, DS and Pakalapati, RT and Do Yoo, H and D'Evelyn, MP},
abstractNote = {A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.},
doi = {10.1016/j.jcrysgro.2014.06.002},
journal = {Journal of Crystal Growth},
number = ,
volume = 403,
place = {United States},
year = 2014,
month =
}