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Performance Analysis of 0.4–1.2-μm CdTe Solar Cells

Journal Article · · IEEE Journal of Photovoltaics
 [1];  [2];  [2]
  1. Colorado State Univ., Fort Collins, CO (United States); Colorado State University
  2. Colorado State Univ., Fort Collins, CO (United States)
Thin-film CdTe solar cells with an absorber thickness range of 0.4 to 1.2 μm were fabricated by close-space sublimation on a transparent MgZnO window layer. Microscopy cross sections showed that a significant fraction of the CdTe crystallites extended throughout the absorber layer, and capacitance measurements demonstrated that the absorbers were depleted into forward bias. Current and fill factor loss analyses were used to identify dominant loss mechanisms in the devices as a function of absorber thickness, and photoluminescence measurements were increasingly influenced by back-surface recombination as the absorber was made thinner. Furthermore, the thinner CdTe devices showed modest current and fill factor reduction but overall good diode quality, and the highest efficiency of 15% was achieved with 1.2 μm CdTe.
Research Organization:
Colorado State Univ., Fort Collins, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
EE0007543
OSTI ID:
1721472
Journal Information:
IEEE Journal of Photovoltaics, Journal Name: IEEE Journal of Photovoltaics Journal Issue: 1 Vol. 10; ISSN 2156-3381
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

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