Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Characterization of thin CdTe solar cells with a CdSeTe front layer

Journal Article · · MRS Advances
DOI:https://doi.org/10.1557/adv.2019.332· OSTI ID:1721471
 [1];  [2];  [2];  [2]
  1. Colorado State Univ., Fort Collins, CO (United States); Colorado State University
  2. Colorado State Univ., Fort Collins, CO (United States)
Thin CdTe photovoltaic device efficiencies show significant improvement with the incorporation of a CdSeTe alloy layer deposited between a MgZnO emitter and CdTe absorber. CdTe and CdSeTe/CdTe devices fabricated by close-space sublimation with a total absorber thickness of 1.5 µm are studied using microscopy measurements and show minimal diffusion of Se into the CdTe. Current loss analysis shows that the CdSeTe layer is the primary absorber in the CdSeTe/CdTe structure, and fill factor loss analysis shows that ideality-factor reduction is the dominant mechanism of fill factor loss. Improvement in the CdSeTe/CdTe absorber quality compared to CdTe is also reflected in spectral and time-resolved photoluminescence measurements. Current density vs. voltage measurements show an increase in current density of up to 2 mA/cm2 with the addition of CdSeTe due to a band gap shift from 1.5 to 1.42 eV for CdTe and CdSeTe/CdTe absorbers respectively. Voltage deficit is lower with the incorporation of the CdSeTe layer, corroborated by improved electroluminescence intensity. Here, the addition of CdSeTe into CdTe device structures has increased device efficiencies from 14.7% to 15.6% for absorbers with a total thickness less than two microns.
Research Organization:
Colorado State Univ., Fort Collins, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
EE0007543
OSTI ID:
1721471
Journal Information:
MRS Advances, Journal Name: MRS Advances Journal Issue: 37 Vol. 4; ISSN 2059-8521
Publisher:
Materials Research Society (MRS)Copyright Statement
Country of Publication:
United States
Language:
English

References (7)

The role of drift, diffusion, and recombination in time-resolved photoluminescence of CdTe solar cells determined through numerical simulation: The role of drift, diffusion, and recombination in time-resolved photoluminescence journal February 2013
Solar cell efficiency tables (Version 45): Solar cell efficiency tables journal December 2014
Thin-film solar cells: device measurements and analysis journal March 2004
Emitter/absorber interface of CdTe solar cells journal June 2016
Recombination Analysis in Cadmium Telluride Photovoltaic Solar Cells With Photoluminescence Spectroscopy journal January 2016
Polycrystalline CdSeTe/CdTe Absorber Cells With 28 mA/cm 2 Short-Circuit Current journal January 2018
Improved CdTe Solar-Cell Performance with An Evaporated Te Layer before The Back Contact journal January 2017

Similar Records

Performance Analysis of 0.4–1.2-μm CdTe Solar Cells
Journal Article · Thu Nov 07 19:00:00 EST 2019 · IEEE Journal of Photovoltaics · OSTI ID:1721472

Device Architecture for Next Generation CdTe PV (Final Report)
Technical Report · Mon Oct 19 00:00:00 EDT 2020 · OSTI ID:1765132

SnO2 Buffer Layers for High Efficiency CdSeTe/CdTe Devices
Conference · Sun Dec 24 23:00:00 EST 2023 · OSTI ID:2305660

Related Subjects