Evaluation of radiation hardness of High-Voltage silicon vertical JFETs

Giacomini, Gabriele; Bomben, Marco; Chen, Wei; Lynn, David

doi:10.1088/1748-0221/15/11/t11001

Evaluation of radiation hardness of High-Voltage silicon vertical JFETs

Journal Article · Mon Nov 02 00:00:00 EST 2020 · Journal of Instrumentation

DOI:https://doi.org/10.1088/1748-0221/15/11/t11001· OSTI ID:1717899

Giacomini, Gabriele ^[1]; Bomben, Marco ^[2]; Chen, Wei ^[1]; Lynn, David ^[1]

Brookhaven National Lab. (BNL), Upton, NY (United States)
LPNHE, Paris (France)

In the future ATLAS Inner Tracker, each silicon strip module will be equipped with a switch able to separate the high voltage supply from the sensor in case the latter becomes faulty. The switch, placed in between the HV supply and the sensor, needs to sustain a high voltage in its OFF state, to offer a low resistance path for the sensor leakage current in the ON state, and be radiation hard up to 1.2 * 10¹⁵ neq/cm² along with other requirements. While GaN JFETs have been selected as suitable rad-hard switch, a silicon vertical HV-JFET was developed by Brookhaven National Laboratory as an alternative option. Pre-irradiation results showed the functionality of the device and proved that the silicon HV-JFET satisfied the pre-irradiation requirements for the switch. To assess its suitability after irradiation, a few p-type HV-JFETs have been neutron irradiated at Jozef Stefan Institute (JSI, Ljubljana, Slovenia). Overall, this paper reports the static characterization of these irradiated devices and the TCAD numerical simulations used to get an insight of the physics governing the post-irradiation behaviour.

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1717899

Alternate ID(s):: OSTI ID: 23037170

Report Number(s):: BNL--220632-2020-JAAM

Journal Information:: Journal of Instrumentation, Journal Name: Journal of Instrumentation Journal Issue: 11 Vol. 15; ISSN 1748-0221

Publisher:: Institute of Physics (IOP)Copyright Statement

Country of Publication:: United States

Language:: English

References (9)

Numerical Simulation of Radiation Damage Effects in p-Type and n-Type FZ Silicon Detectors Petasecca, M.; Moscatelli, F.; Passeri, D. IEEE Transactions on Nuclear Science, Vol. 53, Issue 5 https://doi.org/10.1109/tns.2006.881910	journal	October 2006
Modeling and simulation of neutron induced changes and temperature annealing of Neff and changes in resistivity in high resistivity silicon detectors Li, Zheng Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 342, Issue 1 https://doi.org/10.1016/0168-9002(94)91416-8	journal	March 1994
Effects of deep level defects in semiconductor detectors Lutz, G. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 377, Issue 2-3 https://doi.org/10.1016/0168-9002(96)00025-3	journal	August 1996
First fabrication of a silicon vertical JFET for power distribution in high energy physics applications Fernández-Martínez, Pablo; Flores, D.; Hidalgo, S. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 877 https://doi.org/10.1016/j.nima.2017.08.043	journal	January 2018
A HV silicon vertical JFET: TCAD simulations Giacomini, Gabriele; Chen, Wei; Lynn, David Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 919 https://doi.org/10.1016/j.nima.2018.12.046	journal	March 2019
HVMUX, a high voltage multiplexing for the ATLAS Tracker upgrade Villani, E. Giulio; Phillips, P.; Matheson, J. Journal of Instrumentation, Vol. 12, Issue 01 https://doi.org/10.1088/1748-0221/12/01/C01076	journal	January 2017
Fabrication and electrical characterization of High-Voltage silicon JFETs Giacomini, G.; Chen, W.; Lynn, D. Journal of Instrumentation, Vol. 14, Issue 05 https://doi.org/10.1088/1748-0221/14/05/P05007	journal	May 2019
Numerical Simulation of Radiation Damage Effects in p-Type and n-Type FZ Silicon Detectors Petasecca, M.; Moscatelli, F.; Passeri, D. IEEE Transactions on Nuclear Science, Vol. 53, Issue 5 https://doi.org/10.1109/TNS.2006.881910	journal	October 2006
Acceptor removal - Displacement damage effects involving the shallow acceptor doping of p-type silicon devices Moll, Michael Proceedings of The 28th International Workshop on Vertex Detectors — PoS(Vertex2019) https://doi.org/10.22323/1.373.0027	conference	September 2020

Similar Records

A HV silicon vertical JFET: TCAD simulations

Journal Article · Fri Dec 14 19:00:00 EST 2018 · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment · OSTI ID:1487243

High-Voltage Silicon JFET for HV Multiplexing for the ATLAS MicroStrip Staves

Conference · Mon Sep 17 00:00:00 EDT 2018 · OSTI ID:1488836

A High-Voltage Silicon JFET for the HV-MUX in ATLAS ITk

Conference · Fri Nov 09 23:00:00 EST 2018 · OSTI ID:1489346

Related Subjects

47 OTHER INSTRUMENTATION
Detector control systems
Modular electronics
Radiation-hard electronics

Evaluation of radiation hardness of High-Voltage silicon vertical JFETs

Citation Formats

References (9)

Similar Records

Related Subjects