A High-Voltage Silicon JFET for the HV-MUX in ATLAS ITk
Conference
·
OSTI ID:1489346
We present a new kind of silicon device: a High-Voltage vertical JFET, initially conceived as a candidate for the High-Voltage Multiplexing switch in the ATLAS upgrade of the silicon microstrip Inner Tracker (ITk). It is based on a vertical structure, with the drain being the epitaxial layer. Both n-type and p-type HV-JFETs have been successfully fabricated in the silicon processing facility of Brookhaven National Laboratory. Probe station measurements of un-irradiated devices show low leakage currents and high breakdown voltages (up to 600V) in the OFF state, and high currents in the ON state, which satisfy the requirements for the switch, at least before irradiation. Proton and neutron irradiation are planned to test the suitability of this device at the radiation levels foreseen in the ITk.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
- DOE Contract Number:
- SC0012704
- OSTI ID:
- 1489346
- Report Number(s):
- BNL-210824-2018-COPA
- Country of Publication:
- United States
- Language:
- English
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