Radiation tolerance studies of the HV-mux GaNFETs for the HL-LHC ATLAS ITk Strip detector

Journal Article · Mon Apr 03 00:00:00 EDT 2023 · Journal of Instrumentation

DOI:https://doi.org/10.1088/1748-0221/18/04/c04006· OSTI ID:1986050

Capocasa, F. ^[1]; Fielitz, William ^[2]; Gutierrez Zagazeta, L. F. ^[3]; Kierstead, J. ^[2]; Lynn, D. ^[2]; Musso, C. ^[2]; Stucci, S. ^[2]

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1. Brandeis Univ., Waltham, MA (United States)
2. Brookhaven National Laboratory (BNL), Upton, NY (United States). Physics Department
3. Univ. of Pennsylvania, Philadelphia, PA (United States)

For the High-Luminosity upgrade of the LHC, the current ATLAS inner detector will be replaced with a new silicon charged-particle tracker, the ITk, which consists of the ITk Pixel and the ITk Strip subdetector. The high voltage multiplexing (HV-Mux) GaNFETs are radiation-tolerant transistors that permit switching off high voltage to malfunctioning sensors on the ITk Strip modules. To ensure the reliability of the GaNFETs in the high radiation environment expected at the HL-LHC, a sample of the production batch was exposed to gamma radiation. Finally, the GaNFETs were characterized pre-irradiation and post-irradiation, and monitored during irradiation.

• Research Organization: Brookhaven National Laboratory (BNL), Upton, NY (United States)
• Sponsoring Organization: USDOE Office of Science (SC), High Energy Physics (HEP)
• Grant/Contract Number: SC0012704
• OSTI ID: 1986050
• Report Number(s): BNL-224537-2023-JAAM
• Journal Information: Journal of Instrumentation, Journal Name: Journal of Instrumentation Journal Issue: 04 Vol. 18; ISSN 1748-0221
• Publisher: Institute of Physics (IOP)
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
GaNFETs
radiation-hard detectors
radiation-hard electronic
radiation-hard transistors