Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Linewidth Enhancement Factor Effects and Modulation Response Improvement Mechanism in Injection-Locked Semiconductor Lasers.

Conference ·
OSTI ID:1681111

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1681111
Report Number(s):
SAND2010-4607P; 492565
Country of Publication:
United States
Language:
English

Similar Records

Modulation Response Enhancement Mechanism in Injection-Locked Semiconductor Lasers (invited).
Conference · Sun Aug 01 00:00:00 EDT 2010 · OSTI ID:1692318

Mechanism for Modulation Response Improvement in Mutually Injection-Locked Semiconductor Lasers.
Journal Article · Mon Nov 01 00:00:00 EDT 2010 · IEEE Journal of Quantum Electronics · OSTI ID:1122138

Linewidth Enhancement in Quantum Dot Lasers (invited).
Conference · Tue Oct 01 00:00:00 EDT 2019 · OSTI ID:1642871

Related Subjects