Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Modulation Response Enhancement Mechanism in Injection-Locked Semiconductor Lasers (invited).

Conference ·
OSTI ID:1692318
Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1692318
Report Number(s):
SAND2010-5221P; 506398
Country of Publication:
United States
Language:
English

Similar Records

Linewidth Enhancement Factor Effects and Modulation Response Improvement Mechanism in Injection-Locked Semiconductor Lasers.
Conference · Thu Jul 01 00:00:00 EDT 2010 · OSTI ID:1681111

Mechanism for Modulation Response Improvement in Mutually Injection-Locked Semiconductor Lasers.
Journal Article · Mon Nov 01 00:00:00 EDT 2010 · IEEE Journal of Quantum Electronics · OSTI ID:1122138

Unidirectional injection-locked Brillouin laser in silicon.
Conference · Fri May 01 00:00:00 EDT 2020 · OSTI ID:1783673

Related Subjects