Deep Level Defect Spectroscopy in Reduced Dimension Semiconductor Materials and Devices (invited).
Conference
·
OSTI ID:1661062
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1661062
- Report Number(s):
- SAND2013-3628P; 452370
- Country of Publication:
- United States
- Language:
- English
Similar Records
Deep Level Defect Spectroscopy in Reduced Dimension Semiconductor Materials and Devices.
Spatial and Compositional Dependence of Deep Level Defects in InGaN LEDs (invited).
Ultra-Wide-Bandgap Semiconductors: Materials Devices and Applications (invited).
Conference
·
Mon Jul 01 00:00:00 EDT 2013
·
OSTI ID:1661554
Spatial and Compositional Dependence of Deep Level Defects in InGaN LEDs (invited).
Conference
·
Tue Jan 31 23:00:00 EST 2017
·
OSTI ID:1507626
Ultra-Wide-Bandgap Semiconductors: Materials Devices and Applications (invited).
Conference
·
Thu Jan 31 23:00:00 EST 2019
·
OSTI ID:1601091