Realization of BaZrS3 chalcogenide perovskite thin films for optoelectronics

Wei, Xiucheng; Hui, Haolei; Zhao, Chuan; Deng, Chenhua; Han, Mengjiao; Yu, Zhonghai; Sheng, Aaron; Roy, Pinku; Chen, Aiping; Lin, Junhao; Watson, David F.; Sun, Yi-Yang; Thomay, Tim; Yang, Sen; Jia, Quanxi; Zhang, Shengbai; Zeng, Hao

doi:10.1016/j.nanoen.2019.104317

Realization of BaZrS₃ chalcogenide perovskite thin films for optoelectronics

Journal Article · Fri Nov 22 00:00:00 EST 2019 · Nano Energy

DOI:https://doi.org/10.1016/j.nanoen.2019.104317· OSTI ID:1648108

Wei, Xiucheng ^[1]; Hui, Haolei ^[1]; Zhao, Chuan ^[1]; ^[2]; ^[3]; Yu, Zhonghai ^[4]; Sheng, Aaron ^[1]; Roy, Pinku ^[1]; ^[5]; ^[3]; Watson, David F. ^[1]; Sun, Yi-Yang ^[6]; ^[1]; Yang, Sen ^[4]; Jia, Quanxi ^[1]; Zhang, Shengbai ^[7]; ^[1]

State Univ. of New York (SUNY), Buffalo, NY (United States)
Taiyuan Normal Univ. (China)
Southern Univ. of Science & Technology, Shenzhen (China)
Xi'an Jiaotong Univ. (China)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Chinese Academy of Sciences (CAS), Shanghai (China)
Rensselaer Polytechnic Inst., Troy, NY (United States)

BaZrS₃ is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct band gap of 1.7–1.8 eV, a very strong light-matter interaction, and a high chemical stability. Due to the lack of quality thin films, however, many fundamental properties of chalcogenide perovskites remain unknown, hindering their applications in optoelectronics. In this work, we report the fabrication of BaZrS₃ thin films, by sulfurization of oxide films deposited by pulsed laser deposition. We show that these films are n-type with carrier densities in the range of 10¹⁹-10²⁰ cm^-3. Depending on the processing temperature, the Hall mobility ranges from 2.1 to 13.7 cm²/Vs. The absorption coefficient is > 10⁵ cm^-1 at photon energy >1.97 eV. Temperature dependent conductivity measurements suggest shallow donor levels. By assuring that BaZrS₃ is a promising candidate, these results potentially unleash the family of chalcogenide perovskites for optoelectronics such as photodetectors, photovoltaics, and light emitting diodes.

View Accepted Manuscript (DOE)

Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: National Science Foundation (NSF); Natural Science Foundation of China (NSFC); USDOE; USDOE Laboratory Directed Research and Development (LDRD) Program

Grant/Contract Number:: 89233218CNA000001; EE0007364

OSTI ID:: 1648108

Alternate ID(s):: OSTI ID: 1694277

Report Number(s):: LA-UR--20-24151

Journal Information:: Nano Energy, Journal Name: Nano Energy Vol. 68; ISSN 2211-2855

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Realization of BaZrS3 chalcogenide perovskite thin films for optoelectronics

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Realization of BaZrS₃ chalcogenide perovskite thin films for optoelectronics