Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing

Yu, Zhonghai; Wei, Xiucheng; Zheng, Yixiong; Hui, Haolei; Bian, Mengying; Dhole, Samyak; Seo, Jung-Hun; Sun, Yi-Yang; Jia, Quanxi; Zhang, Shengbai; Yang, Sen; Zeng, Hao

doi:10.1016/j.nanoen.2021.105959

Chalcogenide perovskite BaZrS₃ thin-film electronic and optoelectronic devices by low temperature processing

Journal Article · Sat Mar 06 00:00:00 EST 2021 · Nano Energy

DOI:https://doi.org/10.1016/j.nanoen.2021.105959· OSTI ID:1848516

Yu, Zhonghai ^[1]; Wei, Xiucheng ^[2]; Zheng, Yixiong ^[3]; Hui, Haolei ^[2]; Bian, Mengying ^[2]; Dhole, Samyak ^[3]; Seo, Jung-Hun ^[3]; Sun, Yi-Yang ^[4]; Jia, Quanxi ^[3]; Zhang, Shengbai ^[5]; Yang, Sen ^[6]; Zeng, Hao ^[2]

Xi'an Jiaotong Univ., Shaanxi (China). MOE Key Lab. for Nonequilibrium Synthesis and Modulation of Condensed Matter; Univ. at Buffalo, NY (United States)
Univ. at Buffalo, NY (United States). Dept. of Physics
Univ. at Buffalo, NY (United States). Dept. of Materials Design and Innovation
Chinese Academy of Sciences (CAS), Shanghai (China). Shanghai Inst. of Ceramics, Key Lab. of High Performance Ceramics and Superfine Microstructure
Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics, Applied Physics & Astronomy
Xi'an Jiaotong Univ., Shaanxi (China). MOE Key Lab. for Nonequilibrium Synthesis and Modulation of Condensed Matter

Owing to its superior visible light absorption and high chemical stability, chalcogenide perovskite barium zirconium sulfide (BaZrS₃) has attracted significant attention in the past few years as a potential alternative to hybrid halide perovskites for optoelectronics. However, the high processing temperatures of BaZrS₃ thin films at above 1000 °C severely limits their potential for device applications. Herein, we report the synthesis of BaZrS₃ thin films at temperatures as low as 500 °C, by changing the chemical reaction pathway. The single phase BaZrS₃ thin film was confirmed by X-ray diffraction and Raman spectroscopy. Atomic force microscopy and scanning electron microscopy show that crystalline size and surface roughness were consistently reduced with decreasing annealing temperature. The lower temperatures further eliminate sulfur vacancies and carbon contaminations associated with high temperature processing. The ability to synthesize chalcogenide perovskite thin films at lower temperatures removes a major hurdle for their device fabrication. The photodetectors demonstrate fast response and an on/off ratio of 80. Finally, the fabricated field effect transistors show an ambipolar behavior with electron and hole mobilities of 16.8 cm²/Vs and 2.6 cm²/Vs, respectively.

View Accepted Manuscript (DOE)

Research Organization:: State Univ. of New York (SUNY), Albany, NY (United States)

Sponsoring Organization:: National Science Foundation (NSF); National Science Foundation of China (NSFC); USDOE; USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0007364

OSTI ID:: 1848516

Alternate ID(s):: OSTI ID: 1782384

Journal Information:: Nano Energy, Journal Name: Nano Energy Journal Issue: C Vol. 85; ISSN 2211-2855

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing

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Chalcogenide perovskite BaZrS₃ thin-film electronic and optoelectronic devices by low temperature processing