Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment

Yang, Chen; Fu, Houqiang; Su, Po-Yi; Liu, Hanxiao; Fu, Kai; Huang, Xuanqi; Yang, Tsung-Han; Chen, Hong; Zhou, Jingan; Deng, Xuguang; Montes, Jossue; Qi, Xin; Ponce, Fernando A.; Zhao, Yuji

doi:10.1063/5.0018473

Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment

Journal Article · Thu Aug 06 00:00:00 EDT 2020 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0018473· OSTI ID:1646520

; ; ; ; ; ; ; ; ; Deng, Xuguang; Montes, Jossue; ; ;

We demonstrate a nickel/insulating-GaN (i-GaN)/p-type GaN junction and investigate its electrical properties. The i-GaN is formed by exposure to a low-power hydrogen plasma to passivate the p-GaN layer. Cathodoluminescence spectroscopy of the i-GaN is used to understand the passivation effect of the hydrogen plasma on p-GaN. The junction shows very low leakage (<10−9 A at −50 V), excellent rectifying properties (∼107), high temperature stability, and blue light electroluminescence at forward bias. A bandgap model is proposed to illustrate the electrical properties of hydrogenated p-GaN and to understand the device characteristics.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000868

OSTI ID:: 1646520

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 117; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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