Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $(10\bar{1}0)$ m -plane GaN substrates

Fu, Houqiang; Zhang, Xiaodong; Fu, Kai; Liu, Hanxiao; Alugubelli, Shanthan R.; Huang, Xuanqi; Chen, Hong; Baranowski, Izak; Yang, Tsung-Han; Xu, Ke; Ponce, Fernando A.; Zhang, Baoshun; Zhao, Yuji

doi:10.7567/APEX.11.111003

Title: Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $$(10\bar{1}0)$$ m -plane GaN substrates

Journal Article · Tue Oct 16 00:00:00 EDT 2018 · Applied Physics Express

DOI:https://doi.org/10.7567/APEX.11.111003· OSTI ID:1505567

Fu, Houqiang ^[1]; Zhang, Xiaodong ^[2]; Fu, Kai ^[1]; Liu, Hanxiao ^[3]; Alugubelli, Shanthan R. ^[3]; Huang, Xuanqi ^[1]; Chen, Hong ^[1]; Baranowski, Izak ^[1]; Yang, Tsung-Han ^[1]; Xu, Ke ^[4]; Ponce, Fernando A. ^[3]; Zhang, Baoshun ^[2]; Zhao, Yuji ^[1]

Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer, and Energy Engineering
Chinese Academy of Sciences (CAS), CAS, Suzhou (China). Key Lab. of Nanodevices and Applications, Suzhou Inst. of Nanotech and Nanobionics
Arizona State Univ., Tempe, AZ (United States). Dept. of Physics
Chinese Academy of Sciences (CAS), CAS, Suzhou (China). Key Lab. of Nanodevices and Applications, Suzhou Inst. of Nanotech and Nanobionics; Suzhou Nanowin Science and Technology Co., Suzhou (China)

We report nonpolar vertical GaN-on-GaN p–n diodes grown on m-plane free-standing substrates. Cathodoluminescence measurements showed that the nonpolar p-GaN had a high quality with very few deep-level states. The device exhibited good rectifying behaviors with a turn-on voltage of 4.0 V, on-resistance of 2.3 mΩ∙cm², and high on/off ratio of 10¹⁰. The reverse current leakage was described by a trap-assisted space-charge- limited current conduction mechanism. The critical electrical field was calculated to be 2.0 MV/cm without field plates or edge termination. Finally, these results pave the way for development of novel nonpolar power electronics and polarization-engineering-related advanced power devices.

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Research Organization:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000868

OSTI ID:: 1505567

Journal Information:: Applied Physics Express, Vol. 11, Issue 11; ISSN 1882-0778

Publisher:: Japan Society of Applied PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 15 works

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References (35)

Effects of macroscopic polarization in III-V nitride multiple quantum wells Fiorentini, Vincenzo; Bernardini, Fabio; Della Sala, Fabio Physical Review B, Vol. 60, Issue 12 https://doi.org/10.1103/PhysRevB.60.8849	journal	September 1999
Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition Cruz, Samantha C.; Keller, Stacia; Mates, Thomas E. Journal of Crystal Growth, Vol. 311, Issue 15 https://doi.org/10.1016/j.jcrysgro.2009.02.051	journal	July 2009
Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates Saitoh, Yu; Sumiyoshi, Kazuhide; Okada, Masaya Applied Physics Express, Vol. 3, Issue 8 https://doi.org/10.1143/APEX.3.081001	journal	July 2010
Single-crystal N-polar GaN p - n diodes by plasma-assisted molecular beam epitaxy Cho, YongJin; Hu, Zongyang; Nomoto, Kazuki Applied Physics Letters, Vol. 110, Issue 25 https://doi.org/10.1063/1.4989581	journal	June 2017
High Voltage Vertical GaN p-n Diodes With Avalanche Capability Kizilyalli, Isik C.; Edwards, Andrew P.; Nie, Hui IEEE Transactions on Electron Devices, Vol. 60, Issue 10 https://doi.org/10.1109/TED.2013.2266664	journal	October 2013
The Blue Laser Diode Nakamura, Shuji; Pearton, Stephen; Fasol, Gerhard https://doi.org/10.1007/978-3-662-04156-7	book	January 2000
Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers Fu, Houqiang; Huang, Xuanqi; Chen, Hong Applied Physics Letters, Vol. 111, Issue 15 https://doi.org/10.1063/1.4993201	journal	October 2017
High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates Sun, Min; Zhang, Yuhao; Gao, Xiang IEEE Electron Device Letters, Vol. 38, Issue 4 https://doi.org/10.1109/LED.2017.2670925	journal	April 2017
Low cost high voltage GaN polarization superjunction field effect transistors: Low cost high voltage GaN polarization superjunction field effect transistors Kawai, H.; Yagi, S.; Hirata, S. physica status solidi (a), Vol. 214, Issue 8 https://doi.org/10.1002/pssa.201600834	journal	April 2017
Gallium vacancies and the yellow luminescence in GaN Neugebauer, Jörg; Van de Walle, Chris G. Applied Physics Letters, Vol. 69, Issue 4 https://doi.org/10.1063/1.117767	journal	July 1996
High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy Qi, Meng; Nomoto, Kazuki; Zhu, Mingda Applied Physics Letters, Vol. 107, Issue 23 https://doi.org/10.1063/1.4936891	journal	December 2015
Origin of high hole concentrations in Mg-doped GaN films: Origin of high hole concentrations in Mg-doped GaN films Fischer, A. M.; Wang, S.; Ponce, F. A. physica status solidi (b), Vol. 254, Issue 8 https://doi.org/10.1002/pssb.201600668	journal	April 2017
Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV Fu, Houqiang; Baranowski, Izak; Huang, Xuanqi IEEE Electron Device Letters, Vol. 38, Issue 9 https://doi.org/10.1109/LED.2017.2723603	journal	September 2017
The 2018 GaN power electronics roadmap Amano, H.; Baines, Y.; Beam, E. Journal of Physics D: Applied Physics, Vol. 51, Issue 16 https://doi.org/10.1088/1361-6463/aaaf9d	journal	March 2018
High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination Fu, Houqiang; Fu, Kai; Huang, Xuanqi IEEE Electron Device Letters, Vol. 39, Issue 7 https://doi.org/10.1109/LED.2018.2837625	journal	July 2018
High breakdown voltage p-n diodes on GaN on sapphire by MOCVD: High breakdown voltage p-n diodes Gupta, Chirag; Enatsu, Yuuki; Gupta, Geetak physica status solidi (a), Vol. 213, Issue 4 https://doi.org/10.1002/pssa.201532554	journal	January 2016
Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment Kim, Sang-Woo; Lee, Ji-Myon; Huh, Chul Applied Physics Letters, Vol. 76, Issue 21, p. 3079-3081 https://doi.org/10.1063/1.126585	journal	May 2000
Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure Chowdhury, Srabanti; Mishra, Umesh K. IEEE Transactions on Electron Devices, Vol. 60, Issue 10 https://doi.org/10.1109/TED.2013.2277893	journal	October 2013
Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer Ji, Dong; Laurent, Matthew A.; Agarwal, Anchal IEEE Transactions on Electron Devices, Vol. 64, Issue 3 https://doi.org/10.1109/TED.2016.2632150	journal	March 2017
1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability Nomoto, Kazuki; Song, Bo; Hu, Zongyang IEEE Electron Device Letters, Vol. 37, Issue 2 https://doi.org/10.1109/LED.2015.2506638	journal	February 2016
Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to 200 °C Liu, Z. H.; Arulkumaran, S.; Ng, G. I. Applied Physics Letters, Vol. 94, Issue 14 https://doi.org/10.1063/1.3114422	journal	April 2009
Study of Low-Efficiency Droop in Semipolar ( $20\bar{2}\bar{1}$ ) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence Fu, Houqiang; Lu, Zhijian; Zhao, Xin-Hao Journal of Display Technology, Vol. 12, Issue 7 https://doi.org/10.1109/JDT.2016.2521618	journal	July 2016
Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. II. Sub-band-gap luminescence and electron irradiation effects Robins, Lawrence H.; Bertness, Kris A.; Barker, Joy M. Journal of Applied Physics, Vol. 101, Issue 11 https://doi.org/10.1063/1.2736266	journal	June 2007
Breaking the GaN material limits with nanoscale vertical polarisation super junction structures: A simulation analysis Unni, Vineet; Narayanan, E. M. Sankara Japanese Journal of Applied Physics, Vol. 56, Issue 4S https://doi.org/10.7567/JJAP.56.04CG02	journal	February 2017
Surface-Related Drain Current Dispersion Effects in AlGaN–GaN HEMTs Meneghesso, G.; Verzellesi, G.; Pierobon, R. IEEE Transactions on Electron Devices, Vol. 51, Issue 10 https://doi.org/10.1109/TED.2004.835025	journal	October 2004
720-V/0.35-m $\Omega \cdot$ cm ² Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers Zhang, Yuhao; Yuan, Mengyang; Chowdhury, Nadim IEEE Electron Device Letters, Vol. 39, Issue 5 https://doi.org/10.1109/LED.2018.2819642	journal	May 2018
Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices Zhou, Chunhua; Jiang, Qimeng; Huang, Sen IEEE Electron Device Letters, Vol. 33, Issue 8 https://doi.org/10.1109/LED.2012.2200874	journal	August 2012
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation Zhang, Yuhao; Liu, Zhihong; Tadjer, Marko J. IEEE Electron Device Letters, Vol. 38, Issue 8 https://doi.org/10.1109/LED.2017.2720689	journal	August 2017
Design of 1.2 kV Power Switches With Low <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm{{\scriptscriptstyle ON}}}$ </tex-math></inline-formula> Using GaN-Based Vertical JFET IEEE Transactions on Electron Devices, Vol. 62, Issue 8 https://doi.org/10.1109/TED.2015.2446954	journal	August 2015
Effect of Buffer Layer Design on Vertical GaN-on-GaN p-n and Schottky Power Diodes Fu, Houqiang; Huang, Xuanqi; Chen, Hong IEEE Electron Device Letters, Vol. 38, Issue 6 https://doi.org/10.1109/LED.2017.2690974	journal	June 2017
Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes Zhao, Yuji; Fu, Houqiang; Wang, George T. Advances in Optics and Photonics, Vol. 10, Issue 1 https://doi.org/10.1364/AOP.10.000246	journal	January 2018
GaN-on-Si Vertical Schottky and p-n Diodes Zhang, Yuhao; Sun, Min; Piedra, Daniel IEEE Electron Device Letters, Vol. 35, Issue 6, p. 618-620 https://doi.org/10.1109/LED.2014.2314637	journal	June 2014
Nonpolar (11-20) plane AlGaN∕GaN heterojunction field effect transistors on (1-102) plane sapphire Kuroda, Masayuki; Ishida, Hidetoshi; Ueda, Tetsuzo Journal of Applied Physics, Vol. 102, Issue 9 https://doi.org/10.1063/1.2801015	journal	November 2007
Yellow luminescence and related deep levels in unintentionally doped GaN films Shalish, I.; Kronik, L.; Segal, G. Physical Review B, Vol. 59, Issue 15 https://doi.org/10.1103/PhysRevB.59.9748	journal	April 1999
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes Waltereit, P.; Brandt, O.; Trampert, A. Nature, Vol. 406, Issue 6798 https://doi.org/10.1038/35022529	journal	August 2000

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