Modulation of Turn-On Voltage in Undoped Si/SiGe Heterostructure Insulated-Gate Field-Effect Transistors (IGFETs) for Cryogenic Memory Applications.
Conference
·
OSTI ID:1640200
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1640200
- Report Number(s):
- SAND2019-5947C; 675863
- Country of Publication:
- United States
- Language:
- English
Similar Records
C-V Characteristics of Undoped Si/SiGe Heterostructure Insulated-Gate Field-Effect Transistors.
Electron Bilayers in an Undoped Si/SiGe Double-Quantum-Well Heterostructure.
Scattering Mechanisms in Shallow Undoped Si/SiGe Quantum Wells.
Conference
·
Wed May 01 00:00:00 EDT 2019
·
OSTI ID:1640199
Electron Bilayers in an Undoped Si/SiGe Double-Quantum-Well Heterostructure.
Conference
·
Mon Feb 29 23:00:00 EST 2016
·
OSTI ID:1346101
Scattering Mechanisms in Shallow Undoped Si/SiGe Quantum Wells.
Conference
·
Mon Feb 29 23:00:00 EST 2016
·
OSTI ID:1346100