C-V Characteristics of Undoped Si/SiGe Heterostructure Insulated-Gate Field-Effect Transistors.
Conference
·
OSTI ID:1640199
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1640199
- Report Number(s):
- SAND2019-5946C; 675862
- Country of Publication:
- United States
- Language:
- English
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