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Formation of Ohmic Contacts to n-GaAs at Temperatures Compatible with Indium Flip-Chip Bonding.

Conference ·
OSTI ID:1639867

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1639867
Report Number(s):
SAND2019-4576C; 674951
Country of Publication:
United States
Language:
English

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