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Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam

Journal Article · · IEEE Transactions on Nuclear Science
 [1];  [1];  [1];  [2];  [1];  [1];  [3];  [4];  [4];  [4];  [4];  [5];  [1]
  1. Georgia Inst. of Technology, Atlanta, GA (United States)
  2. Georgia Inst. of Technology, Atlanta, GA (United States). Georgia Tech Research Institute
  3. SpaceX, Redmond, WA (United States)
  4. Aerospace Corp., Los Angeles, CA (United States)
  5. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
+ Show Author Affiliations
This article presents an experimental study of single-event transients (SETs) induced by pulsed X-rays in SiGe heterojunction bipolar transistors (HBTs). Device-level transient data and circuit-level upset data from pulsed X-rays are analyzed and compared to those of heavy-ions. 3-D TCAD modeling is utilized to understand the source of the differences in the transients. The transient peak from the ion-shunt effect is not present in pulsed X-ray transients due to its large spot size and slow pulse transition, both of which lead to lower peak carrier densities. The diffusion "tail," typically present in transients measured from SiGe HBTs, also differs between the two sources. The charge collection of X-ray has a linear correlation with surface linear energy transfer (LET) across the photon energies of 8-12 keV. For a similar surface LET, the impinging heavy-ion pushes the subcollector-substrate junction boundaries of the SiGe HBT deeper, resulting in higher charge collection. Single-event upset (SEU) screening of shift-registers shows that X-ray can detect device sensitive nodes smaller than the beam.
Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
U.S. Department of Defense (DOD) - Defense Threat Reduction Agency (DTRA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1637698
Journal Information:
IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 1 Vol. 67; ISSN 0018-9499; ISSN 1558-1578
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
Charge collection
SiGe heterojunction bipolar transistors (HBTs)
TCAD
pulsed X-ray testing
radiation effects
single-event effects (SEEs)