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Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20 um SiGe heterojunction bipolar transistors and circuits.

Journal Article · · Proposed for publication in the IEEE Transactions on Nuclear Science.
OSTI ID:1005428
 [1];  [2];  [3];  [4];  [5];  [6];  [7];  [1];  [1];  [1];  [1];  [8];  [7];  [9];  [9]; ;
  1. Mayo Foundation, Rochester, MN
  2. Jackson & Tull Chartered Engineers, Washington, DC
  3. Auburn University, Auburn, AL
  4. SGT, Inc., Greenbelt, MD
  5. Raytheon ITSS, Greenbelt, MD
  6. Brookneal, VA
  7. NASA/GSFC, Greenbelt, MD
  8. PR&T, Inc., Fallbrook, CA
  9. Georgia Institute of Technology, Atlanta, GA
+ Show Author Affiliations

Combining broad-beam circuit level single-event upset (SEU) response with heavy ion microprobe charge collection measurements on single silicon-germanium heterojunction bipolar transistors improves understanding of the charge collection mechanisms responsible for SEU response of digital SiGe HBT technology. This new understanding of the SEU mechanisms shows that the right rectangular parallele-piped model for the sensitive volume is not applicable to this technology. A new first-order physical model is proposed and calibrated with moderate success.

Research Organization:
Sandia National Laboratories
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1005428
Report Number(s):
SAND2003-3381J
Journal Information:
Proposed for publication in the IEEE Transactions on Nuclear Science., Journal Name: Proposed for publication in the IEEE Transactions on Nuclear Science. Journal Issue: 6 Vol. 50; ISSN 0018-9499; ISSN IETNAE
Country of Publication:
United States
Language:
English

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Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
CHARGE COLLECTION
HEAVY IONS
HETEROJUNCTIONS
TRANSISTORS