Design of digital circuits using inverse-mode cascode SiGe HBTs for single event upset mitigation.
- Georgia Institute of Technology, Atlanta, GA
- Consultant to NASA, Brookneal, VA
- NASA Goddard Space Flight Center, Greenbelt, MD
We report on the design and measured results of a new SiGe HBT radiation hardening by design technique called the 'inverse-mode cascode' (IMC). A third-generation SiGe HBT IMC device was tested in a time resolved ion beam induced charge collection (TRIBICC) system, and was found to have over a 75% reduction in peak current transients with the use of an n-Tiedown on the IMC sub-collector node. Digital shift registers in a 1st-generation SiGe HBT technology were designed and measured under a heavy-ion beam, and shown to increase the LET threshold over standard npn only shift registers. Using the CREME96 tool, the expected orbital bit-errors/day were simulated to be approximately 70% lower with the IMC shift register. These measured results help demonstrate the efficacy of using the IMC device as a low-cost means for improving the SEE radiation hardness of SiGe HBT technology without increasing area or power.
- Research Organization:
- Sandia National Laboratories
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1021641
- Report Number(s):
- SAND2010-4815C
- Country of Publication:
- United States
- Language:
- English
Similar Records
Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam
Ionizing radiation tolerance of high-performance SiGe HBTs grown by UHV/CVD