Optical diagnostics in the Gaseous Electronics Conference Reference Cell

Journal Article · Sat Jul 01 00:00:00 EDT 1995 · Journal of Research of the National Institute of Standards and Technology

DOI:https://doi.org/10.6028/jres.100.028· OSTI ID:163201

Hebner, G A ^[1]; Greenberg, K E ^[2]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Chemical and Nuclear Engineering

A number of laser-induced fluorescence and absorption spectroscopy studies have been conducted using Gaseous Electronics Conference Reference Cells. Laser-induced fluorescence has been used to measure hydrogen atom densities, to measure argon metastable spatial profiles, to determine the sheath electric field, and to infer the electron density and temperature. Absorption spectroscopy, using lamp sources and diode lasers, has been used to measure metastable atom densities in helium and argon discharges and fluorocarbon densities in silicon etching discharges. The experimental techniques and sample results of these investigations are reviewed.

• Research Organization: Sandia National Laboratory
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 163201
• Journal Information: Journal of Research of the National Institute of Standards and Technology, Journal Name: Journal of Research of the National Institute of Standards and Technology Journal Issue: 4 Vol. 100; ISSN JRITEF; ISSN 1044-677X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
CALIBRATION STANDARDS
CHEMICAL REACTORS
ELECTRON TEMPERATURE
ETCHING
EXPERIMENTAL DATA
FABRICATION
MICROELECTRONIC CIRCUITS
PLASMA DIAGNOSTICS
PLASMA SHEATH
SILICON
STANDARDS