Electrical characteristics of plasma deposited SiO{sub 2} films produced in an ECR reactor from silane/O{sub 2} or TEOS/O{sub 2} gas mixtures
- Univ. of Wisconsin, Madison, WI (United States). Engineering Research Center for Plasma-Aided Manufacturing
SiO{sub 2} films are used as insulators and dielectrics in microelectronic devices. These films are typically grown thermally on a Si wafer, or are deposited by chemical vapor deposition. Both these processes require that the substrate be held at elevated temperature. It is desirable to use a low-temperature deposition process that is compatible with microelectronic devices so that SiO{sub 2} films can be used as interlevel dielectrics and overlayers. This work examines the dependence of the ac electrical properties of ECR deposited SiO{sub 2} films on the source gas mixture and the plasma power and pressure. This is motivated by the need to assess the applicability of these films to electrical applications, and to determine the sensitivity of the electrical properties to process variations. The films are deposited onto a silicon wafer which has been passivated with a thermal oxide layer, and on which an interdigitated electrode pattern has been fabricated. The authors characterize the complex impedance from 100 Hz to 40 MHz of the plasma deposited SiO{sub 2} film by measuring the complex impedance of the electrode pattern before and after deposition. The baseline is subtracted to yield the complex impedance of the film overlayer. Preliminary results indicate that the dielectric properties of ECR deposited SiO{sub 2} are dependent on the source gas mixture. The films deposited from SiH{sub 4}/O{sub 2} have a low-frequency resistive component which the TEOS/O{sub 2} films do not have, while the films deposited from TEOS/O{sub 2} have anomalous behavior above 5 MHz.
- OSTI ID:
- 163158
- Report Number(s):
- CONF-950612--; ISBN 0-7803-2669-5
- Country of Publication:
- United States
- Language:
- English
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