Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

Pavunny, Shojan; Scott, James; Katiyar, Ram

doi:10.3390/ma7042669

Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

Journal Article · Mon Mar 31 00:00:00 EDT 2014 · Materials

DOI:https://doi.org/10.3390/ma7042669· OSTI ID:1628445

Pavunny, Shojan ^[1]; Scott, James ^[2]; Katiyar, Ram ^[3]

Univ. of Puerto Rico, San Juan, PR (United States). Dept. of Physics; DOE/OSTI
Univ. of Puerto Rico, San Juan, PR (United States). Dept. of Physics; Univ. of Cambridge (United Kingdom). Cavendish Lab. Dept. of Physics
Univ. of Puerto Rico, San Juan, PR (United States). Dept. of Physics

A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS) specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS), bipolar (Bi) and BiCMOS chips applications, is presented in this review article.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Puerto Rico, San Juan, PR (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: FG02-08ER46526

OSTI ID:: 1628445

Journal Information:: Materials, Journal Name: Materials Journal Issue: 4 Vol. 7; ISSN 1996-1944; ISSN MATEG9

Publisher:: MDPICopyright Statement

Country of Publication:: United States

Language:: English

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Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

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