Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics

Lundh, James Spencer; Song, Yiwen; Chatterjee, Bikramjit; Baca, Albert G.; Kaplar, Robert J.; Armstrong, Andrew M.; Allerman, Andrew A.; Klein, Brianna A.; Kendig, Dustin; Kim, Hyungtak; Choi, Sukwon

doi:10.1115/1.4047100

Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics

Journal Article · Thu May 21 00:00:00 EDT 2020 · Journal of Electronic Packaging

DOI:https://doi.org/10.1115/1.4047100· OSTI ID:1619236

Lundh, James Spencer ^[1]; Song, Yiwen ^[1]; Chatterjee, Bikramjit ^[1]; Baca, Albert G. ^[2]; Kaplar, Robert J. ^[2]; Armstrong, Andrew M. ^[2]; Allerman, Andrew A. ^[2]; Klein, Brianna A. ^[2]; Kendig, Dustin ^[3]; Kim, Hyungtak ^[4]; Choi, Sukwon ^[1]

Pennsylvania State Univ., University Park, PA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Microsanj, LLC, Santa Clara, CA (United States)
Hongik Univ., Seoul (South Korea)

Researchers have been extensively studying wide-bandgap (WBG) semiconductor materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size, weight, and power of power electronics beyond current devices based on silicon (Si). However, the increased operating power densities and reduced areal footprints of WBG device technologies result in significant levels of self-heating that can ultimately restrict device operation through performance degradation, reliability issues, and failure. Typically, self-heating in WBG devices is studied using a single measurement technique while operating the device under steady-state direct current measurement conditions. However, for switching applications, this steady-state thermal characterization may lose significance since the high power dissipation occurs during fast transient switching events. Therefore, it can be useful to probe the WBG devices under transient measurement conditions in order to better understand the thermal dynamics of these systems in practical applications. In this work, the transient thermal dynamics of an AlGaN/GaN high electron mobility transistor (HEMT) were studied using thermoreflectance thermal imaging and Raman thermometry. Also, the proper use of iterative pulsed measurement schemes such as thermoreflectance thermal imaging to determine the steady-state operating temperature of devices is discussed. These studies are followed with subsequent transient thermal characterization to accurately probe the self-heating from steady-state down to submicrosecond pulse conditions using both thermoreflectance thermal imaging and Raman thermometry with temporal resolutions down to 15 ns.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: National Research Foundation of Korea (NRF); US Air Force Office of Scientific Research (AFOSR); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1619236

Report Number(s):: SAND--2020-3834J; 685180

Journal Information:: Journal of Electronic Packaging, Journal Name: Journal of Electronic Packaging Journal Issue: 3 Vol. 142; ISSN 1043-7398

Publisher:: ASMECopyright Statement

Country of Publication:: United States

Language:: English

References (41)

Electrothermal analysis of AlGaN/GaN high electron mobility transistors Sridharan, Sriraaman; Venkatachalam, Anusha; Yoder, P. D. Journal of Computational Electronics, Vol. 7, Issue 3 https://doi.org/10.1007/s10825-008-0210-x	journal	February 2008
GaN Technology for Power Electronic Applications: A Review Flack, Tyler J.; Pushpakaran, Bejoy N.; Bayne, Stephen B. Journal of Electronic Materials, Vol. 45, Issue 6 https://doi.org/10.1007/s11664-016-4435-3	journal	March 2016
High power applications for GaN-based devices Trew, R. J.; Shin, M. W.; Gatto, V. Solid-State Electronics, Vol. 41, Issue 10 https://doi.org/10.1016/S0038-1101(97)00105-6	journal	October 1997
Influence of the growth temperature of AlN buffer on the quality and stress of GaN films grown on 6H–SiC substrate by MOVPE Qu, Shuang; Li, Shuqiang; Peng, Yan Journal of Alloys and Compounds, Vol. 502, Issue 2 https://doi.org/10.1016/j.jallcom.2010.04.185	journal	July 2010
Electro-thermal modeling of multifinger AlGaN/GaN HEMT device operation including thermal substrate effects Heller, E. R.; Crespo, A. Microelectronics Reliability, Vol. 48, Issue 1 https://doi.org/10.1016/j.microrel.2007.01.090	journal	January 2008
Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs Heller, Eric; Choi, Sukwon; Dorsey, Donald Microelectronics Reliability, Vol. 53, Issue 6 https://doi.org/10.1016/j.microrel.2013.03.004	journal	June 2013
Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing Pomeroy, J. W.; Uren, M. J.; Lambert, B. Microelectronics Reliability, Vol. 55, Issue 12 https://doi.org/10.1016/j.microrel.2015.09.025	journal	December 2015
Graphene quilts for thermal management of high-power GaN transistors Yan, Zhong; Liu, Guanxiong; Khan, Javed M. Nature Communications, Vol. 3, Issue 1 https://doi.org/10.1038/ncomms1828	journal	January 2012
Thermal conduction in AlxGa1−xN alloys and thin films Liu, Weili; Balandin, Alexander A. Journal of Applied Physics, Vol. 97, Issue 7 https://doi.org/10.1063/1.1868876	journal	April 2005
Micro-Raman thermometry in the presence of complex stresses in GaN devices Beechem, T.; Christensen, A.; Graham, S. Journal of Applied Physics, Vol. 103, Issue 12 https://doi.org/10.1063/1.2940131	journal	June 2008
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures Ambacher, O.; Smart, J.; Shealy, J. R. Journal of Applied Physics, Vol. 85, Issue 6 https://doi.org/10.1063/1.369664	journal	March 1999
The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors Choi, Sukwon; Heller, Eric; Dorsey, Donald Journal of Applied Physics, Vol. 114, Issue 16 https://doi.org/10.1063/1.4826524	journal	October 2013
Thermal characterization of gallium nitride p-i-n diodes Dallas, J.; Pavlidis, G.; Chatterjee, B. Applied Physics Letters, Vol. 112, Issue 7 https://doi.org/10.1063/1.5006796	journal	February 2018
Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications Cimalla, V.; Pezoldt, J.; Ambacher, O. Journal of Physics D: Applied Physics, Vol. 40, Issue 20 https://doi.org/10.1088/0022-3727/40/20/S19	journal	October 2007
Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al _0.25 Ga _0.75 N/GaN heterostructures Lisesivdin, S. B.; Acar, S.; Kasap, M. Semiconductor Science and Technology, Vol. 22, Issue 5 https://doi.org/10.1088/0268-1242/22/5/015	journal	March 2007
Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy Kuball, M.; Hayes, J. M.; Uren, M. J. IEEE Electron Device Letters, Vol. 23, Issue 1 https://doi.org/10.1109/55.974795	journal	January 2002
GaN-Based RF Power Devices and Amplifiers Mishra, U. K.; Kazior, T. E. Proceedings of the IEEE, Vol. 96, Issue 2 https://doi.org/10.1109/JPROC.2007.911060	journal	February 2008
High-power AlGaN/GaN HEMTs for Ka-band applications Palacios, T.; Chakraborty, A.; Rajan, S. IEEE Electron Device Letters, Vol. 26, Issue 11, p. 781-783 https://doi.org/10.1109/LED.2005.857701	journal	November 2005
A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz Wu, Yifeng; Jacob-Mitos, Matt; Moore, Marcia L. IEEE Electron Device Letters, Vol. 29, Issue 8 https://doi.org/10.1109/LED.2008.2000921	journal	August 2008
Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices Riedel, G. J.; Pomeroy, J. W.; Hilton, K. P. IEEE Electron Device Letters, Vol. 29, Issue 5 https://doi.org/10.1109/LED.2008.919779	journal	May 2008
Field-Plated Ga ₂ O ₃ MOSFETs With a Breakdown Voltage of Over 750 V Wong, Man Hoi; Sasaki, Kohei; Kuramata, Akito IEEE Electron Device Letters, Vol. 37, Issue 2 https://doi.org/10.1109/LED.2015.2512279	journal	February 2016
$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation Green, Andrew Joseph; Chabak, Kelson D.; Baldini, Michele IEEE Electron Device Letters, Vol. 38, Issue 6 https://doi.org/10.1109/LED.2017.2694805	journal	June 2017
GaN HEMT: Dominant Force in High-Frequency Solid-State Power Amplifiers Komiak, James J. IEEE Microwave Magazine, Vol. 16, Issue 3 https://doi.org/10.1109/MMM.2014.2385303	journal	April 2015
Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs Choi, Sukwon; Peake, Gregory M.; Keeler, Gordon A. IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. 6, Issue 5 https://doi.org/10.1109/TCPMT.2016.2541615	journal	May 2016
Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures Sarua, A.; Kuball, M. IEEE Transactions on Electron Devices, Vol. 53, Issue 10 https://doi.org/10.1109/TED.2006.882274	journal	October 2006
The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs Wang, Xiao-Dong; Hu, Wei-Da; Chen, Xiao-Shuang IEEE Transactions on Electron Devices, Vol. 59, Issue 5 https://doi.org/10.1109/TED.2012.2188634	journal	May 2012
The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTs Choi, Sukwon; Heller, Eric R.; Dorsey, Donald IEEE Transactions on Electron Devices, Vol. 60, Issue 1 https://doi.org/10.1109/TED.2012.2224115	journal	January 2013
GaN Power Transistor Modeling for High-Speed Converter Circuit Design Nakajima, Akira; Takao, Kazuto; Ohashi, Hiromichi IEEE Transactions on Electron Devices, Vol. 60, Issue 2 https://doi.org/10.1109/TED.2012.2226180	journal	February 2013
Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features Choi, Sukwon; Heller, Eric R.; Dorsey, Donald IEEE Transactions on Electron Devices, Vol. 60, Issue 6 https://doi.org/10.1109/TED.2013.2255102	journal	June 2013
GaN on Si Technologies for Power Switching Devices Ishida, Masahiro; Ueda, Tetsuzo; Tanaka, Tsuyoshi IEEE Transactions on Electron Devices, Vol. 60, Issue 10 https://doi.org/10.1109/TED.2013.2268577	journal	October 2013
Electric Field Distribution Around Drain-Side Gate Edge in AlGaN/GaN HEMTs: Analytical Approach Si, Jia; Wei, Jin; Chen, Wanjun IEEE Transactions on Electron Devices, Vol. 60, Issue 10 https://doi.org/10.1109/TED.2013.2272055	journal	October 2013
GaN-on-Si Power Technology: Devices and Applications Chen, Kevin J.; Haberlen, Oliver; Lidow, Alex IEEE Transactions on Electron Devices, Vol. 64, Issue 3 https://doi.org/10.1109/TED.2017.2657579	journal	March 2017
Transient Thermal Characterization of AlGaN/GaN HEMTs Under Pulsed Biasing Pavlidis, Georges; Kendig, Dustin; Heller, Eric R. IEEE Transactions on Electron Devices, Vol. 65, Issue 5 https://doi.org/10.1109/TED.2018.2818621	journal	May 2018
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs Pengelly, Raymond S.; Wood, Simon M.; Milligan, James W. IEEE Transactions on Microwave Theory and Techniques, Vol. 60, Issue 6 https://doi.org/10.1109/TMTT.2012.2187535	journal	June 2012
Analytical Loss Model of High Voltage GaN HEMT in Cascode Configuration Huang, Xiucheng; Li, Qiang; Liu, Zhengyang IEEE Transactions on Power Electronics, Vol. 29, Issue 5 https://doi.org/10.1109/TPEL.2013.2267804	journal	May 2014
A Survey of Wide Bandgap Power Semiconductor Devices Millan, Jose; Godignon, Philippe; Perpina, Xavier IEEE Transactions on Power Electronics, Vol. 29, Issue 5 https://doi.org/10.1109/TPEL.2013.2268900	journal	May 2014
Investigations of 600-V GaN HEMT and GaN Diode for Power Converter Applications Mitova, Radoslava; Ghosh, Rajesh; Mhaskar, Uday IEEE Transactions on Power Electronics, Vol. 29, Issue 5 https://doi.org/10.1109/TPEL.2013.2286639	journal	May 2014
Short-Time-Scale Thermal Mapping of Microdevices Using a Scanning Thermoreflectance Technique Ju, Y. S.; Goodson, K. E. Journal of Heat Transfer, Vol. 120, Issue 2 https://doi.org/10.1115/1.2824246	journal	May 1998
High Temperature Operation of Al _0.45 Ga _0.55 N/Al _0.30 Ga _0.70 N High Electron Mobility Transistors Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A. ECS Journal of Solid State Science and Technology, Vol. 6, Issue 11 https://doi.org/10.1149/2.0041711jss	journal	January 2017
Al _0.85 Ga _0.15 N/Al _0.70 Ga _0.30 N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature Baca, Albert G.; Klein, Brianna A.; Allerman, Andrew A. ECS Journal of Solid State Science and Technology, Vol. 6, Issue 12 https://doi.org/10.1149/2.0231712jss	journal	January 2017
Confocal Raman Microscopy: Performance, Pitfalls, and Best Practice: Invited Lecture at the Symposium “50 Years of SAS: Looking to the Future with Vibrational Spectroscopy” at Pittcon 2008, New Orleans, Louisiana Everall, Neil J. Applied Spectroscopy, Vol. 63, Issue 9 https://doi.org/10.1366/000370209789379196	journal	September 2009

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42 ENGINEERING
Dynamics (Mechanics)
Electron mobility
Electronics
Energy gap
Gallium nitride
Gates (Closures)
Heating
Imaging
Nanoparticles
Probes
Raman thermometry
Steady state
Temperature
Temperature measurement
Thermal characterization
Thermoreflectance
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high electron mobility transistor (HEMT)
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Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics

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