Scanning tunneling microscopy studies of Ge/GaAs(100) interface formation

Journal Article · Thu Jul 01 04:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586916· OSTI ID:161724

Wang, X S; Self, K; Leonard, D ^[1]

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1. Univ. of California, Santa Barbara, CA (United States); and others

Study of the Ge/GaAs(100) interface provides important information to aid in understanding the formation of elemental-compound semiconductor heterojunctions. Using scanning tunneling microscopy and other surface sensitive probes, the Ge/GaAs(100) interface formation was investigated. On a molecular-beam epitaxially grown GaAs(100)-(2 X 4) substrate, submonolayer coverage of Ge atoms converts the surface into a (1 X 2) superstructure after annealing above 825 K. This structure can be explained by the formation of Ge-Ga dimer rows along the [0{bar 1}1] direction. On a surface with a submonolayer coverage of Ge annealed at a lower temperature, rows along the [011] direction with poor (2 X 1) order have been observed, which are considered to be an intermediate structure formed by Ge-As dimers. On vicinal GaAs(100) surfaces, the Ge-Ga dimer (1 X 2) reconstruction reduces the step-kink density. 17 refs., 3 figs.

• OSTI ID: 161724
• Report Number(s): CONF-930115--; CNN: Grant DMR 91-20007; Grant 91-213
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 11; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL LATTICES
DIMERS
GALLIUM ARSENIDES
GERMANIUM
HETEROJUNCTIONS
INTERMEDIATE STRUCTURE
MICROSCOPY
MICROSTRUCTURE
TEMPERATURE DEPENDENCE